Overview of radiation effects on emerging non-volatile memory technologies

Abstract

2 Vin~a In sti tute of Nu clear Sci ences, Uni ver sity of Bel grade, Bel grade, Ser bia 3 Fac ulty of Tech nol ogy and Met al lurgy, Uni ver sity of Bel grade, Bel grade, Ser bia Technical pa per http://doi.org/10.2298/NTRP1704381FIn this pa per we give an over view of ra di a tion ef fects in emer gent, non-vol a tile mem ory technol o gies. In ves ti ga tions into ra di a tion hard ness of re sis tive ran dom ac cess mem ory, ferro electric ran dom ac cess mem ory, mag neto-re sis tive ran dom ac cess mem ory, and phase change mem ory are pre sented in cases where these mem ory de vices were sub jected to dif fer ent types of ra di a tion. The ob tained re sults proved high ra di a tion tol er ance of stud ied de vices mak ing them good can di dates for ap pli ca tion in ra di a tion-in ten sive en vi ron ments. Key words: non-vol a tile mem ory, ra di a tion ef fect, re sis tive RAM, ferro elec tric RAM, mag neto-re sis tive RAM, phase change mem ory I. S. Fetahovi}, et al.: Over view of Ra di a tion

Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation

“…For the in for ma tion to remain stored in dy namic mem ory, it is nec es sary to refresh the con tent pe ri od i cally (mem ory re fresh), oth erwise, the in for ma tion is lost. Lately, there has been a sig nif i cant de vel op ment of semi con duc tor mem o ries [30]. They be came, due to their lower price, a huge pack age den sity, speed and or ga ni za tion ben e fits, the most sig nif i cant mem ory me dium for in stal la tion within com puter sys tems and other dig i tal de vices.…”

Response of GAFChromic® HD-V2 film dosimeter in 10-300 Gy dose range for radiation testing of electronic devices

“…Some of them im ply par tic u lar op er a tive con di tions that can be crit ical and re quire an ad e quate study of the de vice response to ex ter nal ra di a tion fields. In fact, it is well known that ra di a tion can in flu ence elec tronic com ponent and sys tem per for mances, with a va ri ety of induced ef fects, de pend ing on de vice type and ra di a tion field [19][20][21][22][23][24][25][26].…”

Effect of Film Density on MgSiO3-Based Resistive Random-Access Memory

“…This resistance switching behavior allows for the storage and retrieval of data in a non-volatile manner. 3,4 Among the different materials used as the active layer in RRAM devices, MgSiO 3 has gained significant attention. MgSiO 3 offers several advantages that make it an attractive candidate for RRAM applications.…”