During the past few decades digital images have become an important part of numerous scientific fields. Digital images used in medicine enabled tremendous progress in the diagnostics, treatment determination process as well as in monitoring patient recovery. Detection of brain tumors represents one of the active research fields and an algorithm for brain image segmentation was developed with an aim to emphasize four different primary brain tumors: glioma, metastatic adenocarcinoma, metastatic bronchogenic carcinoma and sarcoma from PET, MRI and SPECT images. The proposed image segmentation method is based on the firefly algorithm whose solutions are improved by the k-means clustering algorithm when Otsu's criterion was used as the fitness function. The proposed combined algorithm was tested on commonly used images from Harvard Whole Brain Atlas and the results were compared to other method from literature. The method proposed in this paper achieved better segmentation considering standard segmentation quality metrics such as normalized root square mean error, peak signal to noise and structural similarity index metric.
This paper investigates possible radiation effects in the Cooper-pair insulator state of indium oxide films. Radiation effects are predicted on the basis of Monte Carlo simulations. Results of a combined theoretical and numerical analysis suggest that radiation-induced changes in the investigated films could significantly affect their current-voltage characteristics, and that a transition to a metallic state is possible, due to radiation-induced disruption of the fine-tuned granular structure. Dissociation of Cooper pairs, caused by both the incident radiation and the ions displaced within InOx films, can also destroy the conditions for this specific insulating state to subsist
This paper examines and compares the effects of exposing commercial, off the shelf erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (E 2 PROM) components to gamma rays. Results obtained for CMOS-based EPROM (NM27C010) and E 2 PROM (NM93CS46) components provide evidence that EPROMs have a greater radiation hardness than E 2 PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E 2 PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.
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