This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.
The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin film between two platinum electrodes. Obtained results suggest that a significant generation of oxygen ion/oxygen vacancy pairs in the oxide is to be expected along ion tracks. These can influence the device’s operation by lowering the resistance of the stoichiometric oxide region and the mobility of the vacancies. Changes induced by ion irradiation affect the current-voltage characteristic and state retention ability of the memristor. If the displaced oxygen ions reach the platinum electrodes, they can form the O2 gas and cause a permanent disruption of memristor functionality
This paper investigates, through theory and experiment, the applicability of the results obtained in laboratory tests of relatively short duration performed on model structures, as a part of the process of designing high-voltage equipment intended for lasting exploitation. Possibilities and limititions of applying these results to practical structures are examined using the methods of mathematical statistics. Special attention is devoted to the influence of electrode surface enlargement and pulse load (overvoltage) prolongation on the statistical behaviour of the pulse breakdown voltage random variable, expressed in the form of the enlargement law. In the theoretical part of the paper, the general four-dimensional (space-time) enlargement law is derived, along with its simplified three-dimensional (surface-time) variant. In the part of the paper related to the experiment, performed with the aim of testing the applicability of the derived surface-time enlargement law to SF 6 gas-insulated two-electrode systems, a description of the experimental equipment and procedure is provided, along with the details of measurement data processing. Comparison of experimental results with those predicted by the surface-time enlargement law proved its validity for a two-electrode configuration with a homogenous and radial electric field, insulated by SF 6 gas under pressure (with gas pressure as a parameter).Index Terms -Enlargement law, electrical gas breakdown, SF 6 gas.
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