Simple extension to the Fabry–Perot technique for accurate measurement of losses in semiconductor waveguides

Clark, D. F.; Iqbal, M. S.

doi:10.1364/ol.15.001291

Cited by 19 publications

(6 citation statements)

References 5 publications

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“…As shown, an excellent agreement is obtained between the measured and the simulated mode profile. To characterize the propagation loss in our waveguide we used the standard Fabry-Perot approach [11]. Unfortunately, we could not obtain a conclusive result because of limited waveguide lengths (~1-2 mm, limited by the use of electron beam lithography with positive resist process).…”

Section: Waveguide Characterizationmentioning

confidence: 99%

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process

2010

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We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

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Section: Waveguide Characterizationmentioning

confidence: 99%

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process

2010

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“…2 (b)]. Propagation losses can also be estimated based on the Fabry-Perot fringes induced in the waveguide cavity formed between the input and output end-facets [29][30]. The power reflected from the Fabry-Perot cavity by the end-facets of the waveguides is given by Eq.…”

Section: Characterization Of Waveguides Using the Fabry-perot Methodsmentioning

confidence: 99%

High index contrast passive potassium double tungstate waveguides

Sefünç

Segerink

García-Blanco

2018

Opt. Mater. Express

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High-refractive-index-contrast potassium double tungstate waveguides have been experimentally demonstrated. A bulk KY(WO 4) 2 layer was successfully bonded onto a lower refractive index carrier using a UV curable optical adhesive and polished down to the thickness of 2.4 µm. A set of rib waveguides with ~2 μm width and 0.85 μm slab thickness were fabricated on the thin transferred KY(WO 4) 2 layer by focused-ion-beam milling. The upper-limit of the propagation losses of the fabricated waveguides is estimated to be 1.5 dB/cm at the wavelength of 1.55 μm using the Fabry-Perot method.

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“…Losses for deeply and shallowly etched straight waveguides were measured using the Fabry-Pérot technique [5]. An average of 2.2 dB/cm was obtained for shallowly etched straight waveguides.…”

Section: Measurementsmentioning

confidence: 99%

Extremely Small AWG Demultiplexer Fabricated on InP by Using a Double-Etch Process

Barbarin

Leijtens

Bente

et al. 2004

IEEE Photon. Technol. Lett.

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A compact low-loss 4 4 arrayed waveguide grating (AWG) demultiplexer with a channel spacing of 400 GHz is presented. By employing a double-etch process, a low-loss device is made with deeply etched waveguides that have a bending radius down to 30 m. This small radius and a reduction of the number of array arms, reduces the device size to only 230 330 m 2. Measured insertion losses are less than 5 dB and the crosstalk is below 12 dB. To our knowledge, this is the smallest AWG reported to date.

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Simple extension to the Fabry–Perot technique for accurate measurement of losses in semiconductor waveguides

Abstract: A simple modification to the Fabry-Perot technique for the measurement of semiconductor waveguide losses is described. The modification dispenses with the need for knowing implicitly the reflectivities of end faces of the waveguide, which are usually difficult to ascertain experimentally.

Cited by 19 publications

References 5 publications

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process

High index contrast passive potassium double tungstate waveguides

Extremely Small AWG Demultiplexer Fabricated on InP by Using a Double-Etch Process

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