High index contrast passive potassium double tungstate waveguides

Sefünç, Mustafa; Segerink, Franciscus B.; García-Blanco, Sonia M.

doi:10.1364/ome.8.000629

Cited by 9 publications

(12 citation statements)

References 34 publications

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“…The high rare-earth ion dopant concentration achievable in crystalline host materials has allowed the demonstration of very high gain per unit length in an Yb 3 -doped KYWO 4 2 waveguide (∼935 dB∕cm at 980 nm) [28] and in an Er 3 -doped chloride silicate nanowire (∼100 dB∕cm at 1530 nm). However, such crystalline devices are difficult to fabricate [29] and to integrate onto a passive photonic platform for the development of more complex functionalities. Amorphous host materials can typically be deposited at the wafer level leading to simpler fabrication and integration schemes.…”

Section: Introductionmentioning

confidence: 99%

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

Dijkstra

Korterik

et al. 2020

Photon. Res.

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Silicon nitride Si 3 N 4-on-SiO 2 attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window, extending from ∼400 nm to 2350 nm. Scalable integration of active devices such as amplifiers and lasers on the Si 3 N 4 platform will enable applications requiring optical gain and a muchneeded alternative to hybrid integration, which suffers from high cost and lack of high-volume manufacturability. We demonstrate a high-gain optical amplifier in Al 2 O 3 :Er 3 monolithically integrated on the Si 3 N 4 platform using a double photonic layer approach. The device exhibits a net Si 3 N 4-to-Si 3 N 4 gain of 18.1 0.9 dB at 1532 nm, and a broadband gain operation over 70 nm covering wavelengths in the S-, C-and L-bands. This work shows that rare-earth-ion-doped materials and in particular, rare-earth-ion-doped Al 2 O 3 , can provide very high net amplification for the Si 3 N 4 platform, paving the way to the development of different active devices monolithically integrated in this passive platform.

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Section: Introductionmentioning

confidence: 99%

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

Dijkstra

Korterik

et al. 2020

Photon. Res.

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“…Heterogeneous integration (e.g. bonding onto a SiO 2 substrate followed by thinning and lapping to the desired thickness) is the method primarily proposed for the realization of such high-refractive index contrast waveguides [20]. Control of the final layer thickness is the biggest challenge in this method and strategies such as a polishing stop have been proposed [21].…”

Section: Introductionmentioning

confidence: 99%

In-depth structural analysis of swift heavy ion irradiation in KY(WO₄)₂ for the fabrication of planar optical waveguides

Frentrop¹,

Subbotin²,

Segerink³

et al. 2019

Opt. Mater. Express

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Rare-earth ion doped KY(WO 4) 2 is a well-known active laser crystal, due to its excellent gain characteristics and its relatively high nonlinear refractive index. As these properties are of great benefit to applications in integrated photonics, a study has been done into the fabrication of high refractive index contrast slab waveguides in KY(WO 4) 2 as a first step towards the fabrication of channel waveguides. When properly choosing the fluence and annealing parameters, ion irradiation with 12 MeV carbon ions produces a step-like damage profile. Confocal Raman microscopy, X-ray diffraction and transmission electron microscopy are used in this work to study the structural damage induced by ion irradiation. The characterization indicates damage to the crystal structure due to the ion irradiation that increases as a function of both depth and ion fluence till the threshold for amorphization is achieved. Successive annealing steps of the irradiated crystals at different temperatures show partial repair of the crystalline structure when the irradiation did not fully amorphize the material. When the threshold of amorphization was reached, annealing further increases the damage induced by the irradiation. By tuning the irradiation fluence, a high-refractive index contrast slab waveguide in KY(WO 4) 2 produced by ion irradiation was demonstrated.

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“…A refractive index contrast ranging from 0.4 to 0.6 can be achieved by the integration of KY(WO 4 ) 2 onto a glass substrate. Sefünç et al have demonstrated the integration of KY(WO 4 ) 2 on a glass substrate, using room-temperature curable adhesive (NOA81) and an extensive lapping and polishing procedure to thin a bulk crystal from 1 mm down to 2.4 µm [20]. Waveguides with a maximum length of 300 µm were fabricated using focused ion beam (FIB) milling.…”

Section: Introductionmentioning

confidence: 99%

Lapping and Polishing of Crystalline KY(WO4)2: Toward High Refractive Index Contrast Slab Waveguides

et al. 2019

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Rare-earth ion-doped potassium yttrium double tungstate, RE:KY(WO4)2, is a promising candidate for small, power-efficient, on-chip lasers and amplifiers. Thin KY(WO4)2-on-glass layers with thicknesses ranging between 0.9 and 1.6 μm are required to realize on-chip lasers based on high refractive index contrast waveguides operating between 1.55 and 3.00 µm. The crystalline nature of KY(WO4)2 makes the growth of thin, defect-free layers on amorphous glass substrates impossible. Heterogeneous integration is one of the promising approaches to achieve thin KY(WO4)2-on-glass layers. In this process, crystal samples, with a thickness of 1 mm, are bonded onto a glass substrate and thinned down with an extensive lapping and polishing procedure to the desired final thickness. In this study, a lapping and polishing process for KY(WO4)2 was developed toward the realization of integrated active optical devices in this material.

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High index contrast passive potassium double tungstate waveguides

Cited by 9 publications

References 34 publications

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

In-depth structural analysis of swift heavy ion irradiation in KY(WO₄)₂ for the fabrication of planar optical waveguides

Lapping and Polishing of Crystalline KY(WO4)2: Toward High Refractive Index Contrast Slab Waveguides

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High index contrast passive potassium double tungstate waveguides

Cited by 9 publications

References 34 publications

High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

In-depth structural analysis of swift heavy ion irradiation in KY(WO4)2 for the fabrication of planar optical waveguides

Lapping and Polishing of Crystalline KY(WO4)2: Toward High Refractive Index Contrast Slab Waveguides

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Product

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High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

In-depth structural analysis of swift heavy ion irradiation in KY(WO₄)₂ for the fabrication of planar optical waveguides