Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover-from basic principles to the state of the art-the diverse aspects of integrated thinfilm LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

No abstract

We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Integrated photonics is a powerful platform that can improve the performance and stability of optical systems, while providing low-cost, small-footprint and scalable alternatives to implementations based on free-space optics. While great progress has been made on the development of low-loss integrated photonics platforms at telecom wavelengths, visible wavelength range has received less attention. Yet, many applications utilize visible or near-visible light, including those in optical imaging, optogenetics, and quantum science and technology. Here we demonstrate an ultra-low loss integrated visible photonics platform based on thin film lithium niobate on insulator. Our waveguides feature ultra-low propagation loss of 6 dB/m, while our microring resonators have an intrinsic quality factor of 11 million, both measured at 637 nm wavelength. Additionally, we demonstrate an on-chip visible intensity modulator with an electro-optic bandwidth of 10 GHz, limited by the detector used. The ultra-low loss devices demonstrated in this work, together with the strong secondand third-order nonlinearities in lithium niobate, open up new opportunities for creating novel passive, and active devices for frequency metrology and quantum information processing in the visible spectrum range. I. 1. INTRODUCTIONLow-loss, active and integrated photonic platform operating at visible wavelengths is of great interest for applications ranging from quantum optics and metrology to bio-sensing and bio-medicine. For example, alkali and alkaline earth metals such as rubidium, cesium, calcium and sodium, the key elements for modern precision optical frequency metrology [1-3], magnetometry [4-6] and quantum computation [7-10], have their atomic transitions in visible and near-visible spectrum range. In addition, integrated photonic circuits at visible wavelengths found their way into the fields such as optogenetics [11,12] and bio-sensing [13][14][15]. Furthermore, visible wavelength light is used for quantum state preparation [16], manipulation and read out of color centers [17], quantum dots [18,19] and various quantum emitters in 2d materials [20,21]. Driven by these applications, several materials have been investigated as candidates for visible photonics platform, including SiO 2 [22,23], Si 3 N 4 [24-27], diamond [28-32], TiO 2 [33] and AlN [34]. With exception of AlN, all of these platforms are electro-optically passive and do not allow for fast control of optical signals. Here we show that lithium niobate (LN) is a promising integrated platform for visible photonics, owing to its wide transparency window (400 nm -5000 nm), and large electro-optic coefficient, ∼30 times larger than that of AlN, and strong optical nonlinearity [35]. Our work builds on recently developed thin film lithium niobate (TFLN) substrates [36] and the novel fabrication method [37] which enabled realization of high-performance electro-optical (EO) modulators [38][39][40] and Kerr and EO frequency combs [41,42] in telecom wavelength range (1500-1650nm). TFLN platform has...

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Quasi-phasematched interactions in waveguides with quadratic nonlinearities enable highly efficient nonlinear frequency conversion. In this article, we demonstrate the first generation of devices that combine the dispersion-engineering available in nanophotonic waveguides with quasi-phasematched nonlinear interactions available in periodically poled lithium niobate (PPLN). This combination enables quasi-static interactions of femtosecond pulses, reducing the pulse energy requirements by several orders of magnitude, from picojoules to femtojoules. We experimentally demonstrate two effects associated with second harmonic generation. First, we observe efficient quasi-phasematched second harmonic generation with <100 fJ of pulse energy. Second, in the limit of strong phase-mismatch, we observe spectral broadening of both harmonics with as little as 2-pJ of pulse energy. These results lay a foundation for a new class of nonlinear devices, in which co-engineering of dispersion with quasi-phasematching enables efficient nonlinear optics at the femtojoule level.This document provides supplementary information to "Ultrabroadband Nonlinear Optics in Nanophotonic Periodically Poled Lithium Niobate Waveguides," Optica volume, first page (year), http://dx.doi.org/10.1364/optica.0.000000. In this supplemental, we discuss the calculation of the effective areas for nonlinear interactions in tightly confining waveguides. The detailed calculations presented here will help readers to reproduce the results shown in the main article.http://dx.