Nanoscale Plasmonic Memristor with Optical Readout Functionality

Abstract

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Transparent conducting oxides for electro-optical plasmonic modulators

“…Similar to processes in an amorphous silicon layer, the changes in the optical transmission is attributed to the formation and annihilation of nanoscale metallic filaments [174].…”

Electrochemically Programmable Plasmonic Antennas

“…29 Our use of an electrochemical mechanism to tune optical nanostructures builds on prior studies that applied related mechanisms to tune plasmonic resonances 30,31 and modulate transmission in photonic waveguides. 32,33 It is noted that there are other forms of electrochemical resistance switching memories, such as those based on oxygen anion transport in metal oxide materials. 34,35 While these electrochemical processes are effective at producing conductive filaments based on oxygen vacancies at DC frequencies, they do not apply to our system here because such filaments do not possess highly conductivity at infrared frequencies.…”

Plasmonic circuits for manipulating optical information

“…The on-chip modulator was integrated into a silicon waveguide of 10-μm length with a frequency response up to 70 GHz [139]. A novel plasmon memory device was based on memristor technology in which the growth of a metal filament under action of an applied electric field modulates the plasmon propagation [140] in a MIM waveguide structure. It is possible to control the electron density by an electric field [141][142][143][144] by using a semiconductor or electro-optic material, which can be used to modulate plasmons, or by using Tamm-plasmon-polaritons, which are plasmon states formed at the boundary between a metal and a dielectric Bragg mirror [145].…”