Silver diffusion bonding and layer transfer of lithium niobate to silicon

Diest, Kenneth; Archer, Melissa J.; Dionne, Jennifer A.; Park, Young-Bae; Czubakowski, Matthew J.; Atwater, Harry A.

doi:10.1063/1.2976560

Cited by 22 publications

(12 citation statements)

References 23 publications

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“…The diffusion bonding has been extensively studied in metal sintering 26 and consists in a plastic deformation of the asperities of both metal films. In our case we have a direct bonding at room temperature of highly hydrophilic surfaces.…”

Section: Direct Copper Bonding Mechanismmentioning

confidence: 99%

An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

Cioccio

Gueguen

Taibi

et al. 2011

J. Electrochem. Soc.

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An overview of the different metal bonding techniques used for 3D integration is presented. Key parameters such as surface preparation, temperature and duration of annealing, achievable wafer-to-wafer alignment and electrical results are reviewed. A special focus is done on direct bonding of patterned metal/dielectric surfaces. A mechanism for copper direct bonding is proposed based on bonding toughness measurements, SAM, XRR, XRD, and TEM analysis. Dedicated characterization techniques for such bonding are presented.Bonding of metal surfaces is extensively used for MEMS sealing, power devices, heat dissipation or 3D interconnections. For these applications, techniques such as thermo compression, with or without eutectic alloys or adhesives layers, bumps with low temperature solders or direct bonding are extensively implemented techniques. 1-7 Moreover, for More Moore and More than Moore applications, low temperature bonding and metal bonding are becoming the main drivers of the latest developments. As copper is the main metal used for CMOS interconnects, a high-density Cu interconnection between layer structures, is expected for future three-dimensional integration of electronic devices fabricated on the basis of different technology/ design concepts. In this paper, an overview of the different metal bonding techniques used for 3D integration is presented. Key parameters such as surface preparation, temperature and duration of annealing, achievable alignment and electrical results are reviewed. A special focus is done on direct bonding of patterned metal/dielectric surfaces. A mechanism for copper direct bonding is proposed based on bonding toughness measurements, SAM, XRR, XRD and TEM analysis. Dedicated characterization techniques for such bonding are presented. Hybridization Techniques ReviewCopper is the most (compared to other possible bonding metals) promising candidate for 3D integration technology either for TSV filling or interstata hybridizing. The main reasons of this choice is the widely use of copper in semiconductor device industries and the cost of ownership. On the other hand, the choice of the metal bonding technique is still an open question. Bonding anneal temperature, duration of the annealing, need of an underfill, size and pitch of the interconnect pads, availability of the technique for wafer bonding or die bonding are key parameters of the final choice. The main studied bonding techniques can be divided into two groups: with and without thermal compression.Bonding with a compression force: Diffusion bonding.-The thermal compression bonding is a well known technique. 8-10 Wafers or dies are pressed together with a controlled force in a bonding tool, while heating is applied (400 C) to allow the bonding diffusion mechanism. Thanks to the compression force, the surfaces roughness is not a limiting factor as the surface asperities are deformed at the bonding interface, therefore surfaces with a roughness in the range of 5 nm can be used. Copper oxide should be avoided or removed right before ...

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Section: Direct Copper Bonding Mechanismmentioning

confidence: 99%

An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

Cioccio

Gueguen

Taibi

et al. 2011

J. Electrochem. Soc.

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“…The LNO and silicon ͑Si͒ substrate were bonded together with minimal pressure and a silver bonding layer. 16 The substrate, the bonding layer, and the LNO specimen have square bases with sides of 1 cm. The thickness of the substrate and the bonding layer are 1 mm and 800 nm, respectively.…”

Section: B Effect Of a High Compressive Stress On The Filmmentioning

confidence: 99%

Competing failure mechanisms in thin films: Application to layer transfer

Ponson

Diest

Atwater

et al. 2009

Journal of Applied Physics

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We investigate the origin of transverse cracks often observed in thin films obtained by the layer transfer technique. During this process, two crystals bonded to each other containing a weak plane produced by ion implantation are heated to let a thin layer of one of the material on the other. The level of stress imposed on the film during the heating phase due to the mismatch of thermal expansion coefficients of the substrate and the film is shown to be the dominent factor in determining the quality of the transferred layer. In particular, it is shown that if the film is submitted to a tensile stress, the microcracks produced by ion implantation are not stable and deviate from the plane of implantation making the layer transfer process impossible. However, if the compressive stress exceeds a threshold value, after layer transfer, the film can buckle and delaminate, leading to transverse cracks induced by bending. As a result, we show that the imposed stress m -or equivalently the heating temperature-must be within the range − c Ͻ m Ͻ 0 to produce an intact thin film where c depends on the interfacial fracture energy and the size of defects at the interface between film and substrate.

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“…Lee and co-workers were able to transfer micron-thick platelets broken off LiNbO 3 crystals onto SOI ring resonators, and demonstrate the electro-optic modification of their transfer function [16]. Thin layers of LiNbO 3 were also transferred through ion implantation in bulk crystal, silver-mediated bonding and heating [17].…”

Section: Introductionmentioning

confidence: 97%

Wafer bonding techniques for hybrid silicon photonic devices based on surface modifications

Artel

Ilovitsh

Bakish

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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The low-temperature bonding of lithium-niobate to silicon and of indium-phosphide to silicon is reported. The bonding technique is based on modifications to the surfaces of the substrates to-be-bonded, through the deposition of self-assembled, single layers of organic molecules. Chemical functionalization of the monolayers promotes the subsequent formation of bonds across the interface between the two substrates. The technique could be applicable to the fabrication of hybrid-silicon active photonic devices such as light sources, amplifiers and modulators, which are more difficult to implement solely in the silicon materials platform. Compared with direct molecular bonding methods that are currently being used in the fabrication of such devices, monolayersassisted bonding provides numerous potential advantages: the functional groups at the monolayers termini can be chosen and adjusted to accommodate specific substrates; the process is carried out at a relatively low temperature of 120 -150°C; the outgassing of by-products may be avoided; lastly, while the bonding interface is only a few nm-thin and does not disrupt optical coupling, it may nevertheless provide a relaxation of the substrate flatness and micro-roughness requirements.

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Silver diffusion bonding and layer transfer of lithium niobate to silicon

Cited by 22 publications

References 23 publications

An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

Competing failure mechanisms in thin films: Application to layer transfer

Wafer bonding techniques for hybrid silicon photonic devices based on surface modifications

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