Silicon ink selective emitter process: Optimization of selectively diffused regions for short wavelength response

Poplavskyy, Dmitry; Scardera, Giuseppe; Abbott, Malcolm; Meisel, A.; Chen, X.; Shah, Syed Imran Hussain; Tai, E.M.; Terry, Mason L.; Lemmi, F.

doi:10.1109/pvsc.2010.5614303

Cited by 15 publications

(6 citation statements)

References 6 publications

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“…Contact co-firing was done in a Despatch belt furnace, followed by laser edge isolation. The silicon ink selective emitter process has been described in detail previously [2] . The diffusion strength is controlled via reci pe parameters and characterized with four-point probe (4pp) and secondary ion mass spectroscopy (SIMS) mea surements on monitor wafers.…”

Section: Methodsmentioning

confidence: 99%

Front metal and diffusion optimization for selective emitter

Burrows

Meisel

Scardera

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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A complex optimization is required to reach the full poten tial of the selective emitter (SE) architecture. The focus of this report will be the front metal contact and phosphorous emitter diffusion strength. This optimization requires con sideration of Rsheet (sheet resistance) of the field and con tact regions as a function of diffusion recipe, metal Rcontact (contact resistance) as a function metal paste, and Remitter (emitter resistance) as a function of finger spacing. To cover the Rsheet , field range of interest, the field diffusion strength was varied from 60 -100 0/0. To quantify the impact of Rcontact, an advanced formulation metal paste with reduced Rcontact was compared to an industry bench mark. The final parameter varied is the finger spacing, varied from 1.6 -2.1 mm. Testing reveals there are mar ginal gains from increasing the diffusion RSheet , field above 100 % due to reduced front surface field below the metal contacts causing reduced Voc. More substantial gains were realized by from an advanced metal paste formula tion which reduces Rcontact. Finally the concept that re duced finger spacing can be used to reduce Remitter com ponent is pushed until it falls into printability limitations due to the need for progressively thinner fingers. The net result from diffusion strength, paste, and finger spacing optimiza tion yield a mean efficiency of 19.2%, +0.2%abs gain over the control.

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Section: Methodsmentioning

confidence: 99%

Front metal and diffusion optimization for selective emitter

Burrows

Meisel

Scardera

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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“…Depending on the technique, need of laser ablation, additional steps like masking, repeated diffusions, etch back processes are among the drawbacks of such techniques. A screen-printable ink based on Si-nanoparticles was also provided which are selectively deposited prior to phosphorus diffusion to form heavily doped areas of the selective emitter structure [54]. This technology is already commercially available and includes an extra step of diffusion process for mass production.…”

Section: Selectively Screen-printing and Single Diffusion Processmentioning

confidence: 99%

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Üzüm¹,

Ito²,

Dhamrin³

et al. 2017

New Research on Silicon - Structure, Properties, Technology

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Existing technologies for conventional high-efficient solar cells consist of vacuum-processed, high cost, sophisticated, and potentially hazardous techniques (POCl 3 diffusion, SiNx deposition, etc.) during crystalline silicon solar cell manufacturing. Alternative research studies of non-vacuum and cost-efficient processes for crystalline silicon solar cells are in continuous demand. However, there is not a well understanding of utilizing schemes and the achievable performances for such applications and techniques in solar cell fabrication. This chapter addresses the non-vacuum processes and applications for crystalline silicon solar cells. Such processes including spin coating and screen-printing phosphorus and boron diffusions for the formation of n+ and p+ emitter or back surface fields, spin coating and spray-deposited antireflection coatings for silicon solar cells. Application techniques were explained by combining and comparing experimental results with the calculation and simulations. Consequently, the aim of this chapter is to provide a good understanding of the non-vacuum processes for crystalline solar cells both with simulation and with experimental proves.

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“…Industrialization of Selective Emitter (SE) was earlier than rear surface passivation of silicon cells. [7][8][9][10][11][12] There are many methods to form the SE structure, which include patterned ion implantation, [10] laser doping (LD), [9] etch back, [8,11] silicon ink, [12] and others. LD using a phosphosilicate glass (PSG) layer as a doping precursor layer is the simplest and cheapest method, because it needs only one additional process and almost no additional materials.…”

Section: Introductionmentioning

confidence: 99%

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

Shang

Cui

Zhuang

et al. 2021

Physica Rapid Research Ltrs

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p‐Type silicon solar cells with a structure of passivated emitter and rear cell (PERC) are a mainstream product of the photovoltaic (PV) industry. Because of its low cost, PERC technology will continue to be dominant for a long time. One of the key features to improve PERC solar cell performance is the use of a selective emitter (SE), which is now mainly realized by laser doping (LD). However, SE by LD still cannot perfectly resolve recombination underneath the front metallized area. The use of a tunnel oxide passivated contact (TOPCon) can dramatically reduce recombination at the metallized area. With the help of an organic mask and etching by texturing solution, the TOPCon SE structure on PERC cells is realized. An average efficiency of 22.65% is reached on 6 in., commercial grade p‐type Czochralski wafers. The average open‐circuit voltage of PERC cells with TOPCon SE is 14.6 mV higher than LD SE. However, the short‐circuit current is lowered by parasitic absorption of polysilicon of alignment margins, which makes cell efficiency of the two SE structures almost the same. With improved alignment precision, TOPCon SE will provide an increase in efficiency.

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Silicon ink selective emitter process: Optimization of selectively diffused regions for short wavelength response

Cited by 15 publications

References 6 publications

Front metal and diffusion optimization for selective emitter

Front metal and diffusion optimization for selective emitter

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

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