Silicon Carbide BioMEMS

Zorman, Christian A.; Barnes, Andrew

doi:10.1016/b978-0-12-385906-8.00010-6

Cited by 3 publications

(8 citation statements)

References 57 publications

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“…It was found that the membranes were able to pass proteins with molecular weights of up to 29 kDa and were able to exclude proteins in excess of 45 kDa. Moreover, the porous SiC membranes exhibited lower protein absorption as compared to commercially available polymer-based membranes specifically designed for protein absorption, indicating the potential for SiC membranes in biofilteration applications [13].…”

Section: Biofiltrationmentioning

confidence: 99%

“…Examples include RF switches and accelerometers [12]. Amorphous-SiC films deposited by PECVD generally exhibit a very wide range of residual stress (typically compressive in as-deposited films) that exhibit a strong dependence on deposition conditions [13].…”

Section: Physics and Technology Of Silicon Carbide Devicesmentioning

confidence: 99%

“…The principal factor affecting yield is wafer bowing due to high tensile residual stress in the 3C-SiC films. The techniques developed for Si bulk micromachining, including photoelectrochemical etching, DRIE, and laser micromachining, have been successfully adapted for SiC albeit typically with much lower etch rates [13]. Among the first SiC MEMS structures to be routinely fabricated were diaphragms, cantilever beams, and related structures fabricated out of single crystalline 3C-SiC films by silicon anisotropic etching.…”

Section: Bulk Micromachiningmentioning

confidence: 99%

“…The wide bandgap, combined with chemical inertness, result in SiC being the best material for gas sensing in harsh environments or at high temperatures. Thin film silicon carbide exhibits thermal conductivity on the same order of single crystalline silicon and has a fast thermal response [13]. MEMS-based microprobes for neural interfacing and biosensing applications are currently the subject of intense research due to the promise of achieving high functionality in a minimally invasive form-factor.…”

Section: Biosensorsmentioning

confidence: 99%

“…Under the proper conditions, the pore size and porosity of the resulting structures offer the potential to use porous SiC in biofiltration applications. For biofilteration applications, the porous material was formed by bulk electro-chemical etching of p-type and n-type, 6H-SiCsubstrates [13]. Rosenbloom et al reported the development of porous SiC membranes for use as protein filters [46].…”

Section: Biofiltrationmentioning

confidence: 99%

See 4 more Smart Citations

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Mahmoodi¹,

Ghazanfari²

2012

Physics and Technology of Silicon Carbide Devices

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Section: Biofiltrationmentioning

confidence: 99%

Section: Physics and Technology Of Silicon Carbide Devicesmentioning

confidence: 99%

Section: Bulk Micromachiningmentioning

confidence: 99%

Section: Biosensorsmentioning

confidence: 99%

Section: Biofiltrationmentioning

confidence: 99%

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Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Mahmoodi¹,

Ghazanfari²

2012

Physics and Technology of Silicon Carbide Devices

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Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Fraga¹,

Pessoa²,

Massi³

et al. 2012

Physics and Technology of Silicon Carbide Devices

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The great development of thin film growth techniques has stimulated the industrial and academic researches about design, fabrication and test of thin film based devices. The replacement of the conventional bulk materials by thin films allows the fabrication of devices with smaller volume and weight, higher flexibility besides lower cost and good performance. It has been shown that the efficiency of thin film based devices is strongly dependent on their structural, electrical, mechanical and optical properties Fraga, a Fraga . At the same time that there is a trend in the miniaturization of electronic and electromechanical devices, there is also a considerable interest in the study of wide bandgap materials to replace the silicon as base material in these devices for harsh applications such as high temperatures and high levels of radiation Fraga, , Yeung, .Silicon carbide SiC has intrinsic properties that make it a material of great interest for microelectronic and MEMS Micro-Electro-Mechanical Systems applications. In the last years, there has been much debate in the literature about how the incorporation of dopant elements such as nitrogen, oxygen, aluminum, boron, phosphorus, etc. during the growth of SiC thin films by chemical vapor deposition CVD or physical vapor deposition PVD processes affects their properties. It has been noticed that the dopant incorporation allows controlling thin film properties such as optical bandgap and electrical conductivity, which are quite attractive because make possible to obtain semiconductor or insulator SiC-based films Alizadeh, Medeiros, . In general, the use of amorphous SiC films has been preferred due to relatively their low growth temperature, which guarantees a larger compatibility with silicon-based technology Hatalis, .Nowadays, SiC-based thin films, such as SiCN, SiCO, SiCNO, SiCB, SiCBN and SiCP, have been extensively used in electronic and MEMS devices either as a semiconductor or as an insulator, depending on the film composition. These films have been shown promising for applications in diodes, thin-film transistors TFTs and MEMS devices Yih, Patil, Hwang, Fraga, c .The goal of this chapter is to discuss the role of in situ incorporation of nitrogen, oxygen, aluminum, boron, phosphorus and argon on the properties of SiC films. Special attention is given to the low temperature SiC growth processes. An overview on the applications of SiCbased thin films in electronic and MEMS devices is presented and discussed. Our recent researches on heterojunction diodes and MEMS sensors are emphasized. . Dopant incorporation during growth of SiC thin films . . In situ dopingMost studies on SiC thin films, especially in their amorphous form, is not focused on intrinsic films. In general, the electrical properties of wide band gap semiconductor materials as the SiC are controlled by introducing dopants into the bulk material Oliveira, . Hence, determining the best material doping concentration is one important issue to be considered during a device development. SiC-based thin ...

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PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

Iliescu¹,

Poenar²

2012

Physics and Technology of Silicon Carbide Devices

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solution. Early studies have been done on the structural, optical and electronic properties of this material [ , ]. More specifically, one of the key challenges for PECVD of SiC for MEMS and NEMS applications is achieving alow residual stress together, if possible, with a high deposition rate and good uniformity [ ], [ -].The main advantages of PECVD α-SiC deposition can be summarized as follows:• Low temperature deposition, usually between -C depending on the specific s of the machine and recipe employed for the deposition, as well as on the details of the device s fabrication process .• "s a direct consequence of the advantage mentioned previously, α-SiC is a highly suitable structural layer for surface micro machining applications using • The ability of the fabricated device to operate at relatively high temperatures.• Large mechanical strength of the deposited α-SiC layer.• Wide bandgap for the deposited α-SiC layer, making it an almost ideal optoelectronic material, transparent for all visible wave lengths above . µm and thus highly suitable for guiding light in the visible and infrared optical spectrum [ ].• " refractive index greater than . significantly larger than that of SiO and even that that of Si N also make α-SiC an excellent candidate for optical waveguides [ ].• Capability to deposit conformal layers [ ].• The deposited α-SiC has a coefficient of thermal expansion CTE relatively similar with that of Si. This means that the risks of both developing very high internal stress within the film and, therefore, of subsequent delamination, are minimized [ ] when the devices are operated even at high temperatures.• The deposited α-SiC is highly suitable for applications requiring a high level of corrosion resistance and moderate operating temperatures belowThis chapter will focus on the PECVD deposition of α-SiC layers for MEMS/NEMS applications. The chapter is organized in three major parts:• " detailed description of the typical PECVD reactor and of the important aspects necessary for a competitive α-SiC deposition process.• The influence of main parameters on the deposition process and how one could achieve a low stress α-SiC film with anexcellent uniformity and a good deposition rate• Post-deposition processing of the PECVD α-SiC layerfor various devices and applications.Physics and Technology of Silicon Carbide Devices 132

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Silicon Carbide BioMEMS

Cited by 3 publications

References 57 publications

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

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