Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Silicon Nanofluidic Membrane for Electrostatic Control of Drugs and Analytes Elution

“…Moreover, in our fabrication protocol, silicon carbide completely encapsulates the membrane and, therefore, is the only material exposed to the environment. Silicon carbide was specifically chosen for this encapsulation purpose as it’s considered a versatile material for biomedical applications where extended exposure to physiological fluids is needed [ 48 , 49 ]. Additionally, in vivo biocompatibility of SiC was demonstrated by Cogan et al [ 50 ], who subcutaneously implanted SiC discs in New Zealand White rabbit, the histological evaluation showed no chronic inflammatory response, and a capsule thickness comparable to controls was found.…”

Shell-Thickness Controlled Semiconductor–Metal Transition in Si–SiC Core–Shell Nanowires

“…Biocompatibility is an elusive notion, though, because it normally depends on how and where the material is used. Yet, there is a general consensus on the fact that the chemically inert and hydrophilic surface of SiC makes it a much better biocompatible material than Si. − …”

“…The SiC noticeable capability to be functionalized with biomolecules and biological systems has been demonstrated in many medical applications like the construction of myocardial biosensors, the coating of neural probes, and the hard coatings for coronary heart stents. , Moreover, its ease to be grown on Si substrates − and its extraordinary electronic properties, i.e., wide band gap, large electron mobility, high saturation drift velocity, and high dielectric breakdown field, are clear signs of its remarkable potential as active component of electronic devices. Therefore, one can envisage a biosensor whose backbone is made of Si, thus easily embedded into the existing technology, and where the interface between the electronic and biological world is mediated by the more biocompatible 3C-SiC surface. , A major challenge for this architecture is the huge lattice mismatch between Si and 3C-SiC both in lattice parameters (19% at room temperature) and in thermal expansion coefficients (23% at deposition temperatures and 8% at room temperatures) . As a matter of fact, planar and volume defects, high residual stress and voids deriving by this mismatch can be reduced only by carefully modulating temperature and pressure conditions during the heteroepitaxial growth .…”

Atomic-Level Simulation Study of n-Hexane Pyrolysis on Silicon Carbide Surfaces

“…The underlying rationale for this interest of the scientific and engineering community is the unique structural and material properties of SiC, where high strength of the Si–C bonds play the crucial role . Thermal shock resistance, creep resistance and high temperature strength make silicon carbide an excellent material for harsh environment applications such as environmental barrier coatings, aerospace applications, nuclear power instrumentation, , and also electronic devices in harsh environments. ,− A large number of SiC polytypes with wide band gap and biocompatibility also offer many possibilities for using SiC as a material for various sensor design, including MEMs sensors, gas sensors, optical detectors, and semiconductor instruments and devices. , Chemical stability along with corrosion resistance, , particularly oxidation resistance, , opens up opportunities for applications in the field of heat exchangers, recuperators and chemical processing components …”