Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

Yu, Zhishui; Yan, Yong; Li, Shasha; Zhang, Yanxia; Yan, Chuanpeng; Liu, Lian; Zhang, Yong; Zhao, Yong

doi:10.1016/j.apsusc.2012.09.171

Cited by 31 publications

(4 citation statements)

References 30 publications

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“…The absorption enhancement in the near-infrared region (~700-2500 nm) for the samples grown with the temperature of 150 0 C and 300 0 C is the most remarkable observation at first glance. As compatible with the literature [33], the fact that crystallinity is improved even at low temperatures (150 0 C) could be expressed as the main reason for the higher absorption. On the other hand, the slight increment in absorption for each film deposited with a higher incident angle of 60 0 compared to its counterpart film obtained with a lower angle of 40 0 is another important observation that should be evaluated.…”

Section: Resultssupporting

confidence: 85%

Influence of The Substrate-Target Angle and Sputter Temperature On The Properties of CIGS Thin Films Sputtered From Single Quaternary Target

Keleş

GÜÇLÜER²

2023

Cumhuriyet Science Journal

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In this study, Copper Indium Gallium Selenide (CIGS) thin films were successfully sputtered from a single quaternary target onto soda lime glass substrates. The effect of the incident angle of target atoms and sputter temperature on the properties of the films were examined using various techniques. It was found that a higher incident angle of target atoms resulted in a columnar microstructure, while a lower angle produced a solid film. The columnar structure showed improved optical absorption compared to the solid film. The sputter temperature had a greater effect on the crystalline properties of the films, with all films except those sputtered at room temperature showing polycrystalline formation. The films displayed a chalcopyrite structure and acceptable band gaps in the range of 1.1-1.3 eV, regardless of the incident angle and sputter temperature. These results indicate that the optical properties of CIGS thin films can be improved by a small increase in the incident angle of target atoms, without adversely affecting the structural and crystalline properties.

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Section: Resultssupporting

confidence: 85%

Influence of The Substrate-Target Angle and Sputter Temperature On The Properties of CIGS Thin Films Sputtered From Single Quaternary Target

Keleş

GÜÇLÜER²

2023

Cumhuriyet Science Journal

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“…In our previous study [10], we reported on the effect of T sub on the CIGS film properties and found that a T sub of 350°C produces a single chalcopyrite phase CIGS film. Unfortunately, all the 80 W-deposited films are deficient in Se due to Se's re-evaporation, and thus unsuitable for absorber layers.…”

Section: Introductionmentioning

confidence: 96%

“…Recently, efforts have been made to fabricate CIGS layers by sputtering. To further reduce the fabrication costs, a one-step sputtering has been developed [7][8][9][10] to deposit CIGS films without selenization. Frantz et al [7] prepared CIGS solar cell with an efficiency of up to 8.9 % through one-step radio frequency (RF) sputtering at T sub of 550°C.…”

Section: Introductionmentioning

confidence: 99%

Structure and properties of CIGS films based on one-stage RF-sputtering process at low substrate temperature

Yan

et al. 2014

J. Mod. Transport.

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Currently, Nanjing South Railway Station planning to implement slate roof renovation is integrating solar cell modules into traditional roof materials to generate clean energy. Copper-indium-gallium diselenide (CuIn 1-x Ga x Se 2 , CIGS) is one of the most promising materials for thin film solar cells. Cu(In 1-x Ga x)Se 2 films were deposited by a one-step radio frequency magnetron sputtering process at low substrate temperature. X-ray diffraction, Raman, scanning electron microscopy, energydispersive X-ray spectroscopy, and electrical and optical measurements were carried out to investigate the deposited films. The results reveal that a temperature of 320°C is critical for near-stoichiometric CIGS films with uniform surface morphology. Cu-rich phase particulates are found at less than this temperature. The sample deposited at 380°C gives well-crystalline single-phase CIGS film. Furthermore, the electrical and optical performances of the absorber layer are improved significantly with the increasing substrate temperature.

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“…Moreover, the grain size depends not only on the temperature but also on other parameters, such as GGI ratio, sputtering pressure, and power [34]. Yu et al [35] found the average grain size of 200 nm for the substrate temperature equaled 350 • C. Peace et al [12] found that the grain size of the CIGS decreased with the increase of gallium content. The highest GGI (0.41) resulted in the smallest grains of size 41 nm.…”

Section: Discussionmentioning

confidence: 99%

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Gulkowski

Krawczak

2020

Coatings

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Thin film Cu(In,Ga)Se2 (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of easily scalable industrial process. One of the possible solutions is the usage of magnetron sputtering system for deposition of all structures applied in CIGS-based photovoltaic device. The main object of these studies was fabrication and characterization of thin films deposited by sputtering technique. Structural and electrical properties of the sputtered films were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray Powder Diffraction (XRD), and four-point probe resistivity measurements. The presented findings revealed technological parameters for which sheet resistance of molybdenum (Mo) back contact decreased up to 0.3 Ω/□ and to even 0.08 Ω/□ in case of aluminum layer. EDS analysis provided evidence for the appropriate stoichiometry of CIGS absorber (with CGI and GGI equal to 0.96 and 0.2, respectively). XRD characterization confirmed high-quality chalcopyrite polycrystalline structure of Cu(In,Ga)Se2 film fabricated at relatively low substrate temperature of 400 °C. Characteristic XRD peaks of hexagonal-oriented structures of sputtered CdS and i-ZnO layers were noticed.

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Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

Cited by 31 publications

References 30 publications

Influence of The Substrate-Target Angle and Sputter Temperature On The Properties of CIGS Thin Films Sputtered From Single Quaternary Target

Influence of The Substrate-Target Angle and Sputter Temperature On The Properties of CIGS Thin Films Sputtered From Single Quaternary Target

Structure and properties of CIGS films based on one-stage RF-sputtering process at low substrate temperature

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

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