Structure and properties of CIGS films based on one-stage RF-sputtering process at low substrate temperature

Abstract

Currently, Nanjing South Railway Station planning to implement slate roof renovation is integrating solar cell modules into traditional roof materials to generate clean energy. Copper-indium-gallium diselenide (CuIn 1-x Ga x Se 2 , CIGS) is one of the most promising materials for thin film solar cells. Cu(In 1-x Ga x)Se 2 films were deposited by a one-step radio frequency magnetron sputtering process at low substrate temperature. X-ray diffraction, Raman, scanning electron microscopy, energydispersive X-ray spectroscopy, and electrical and optical measurements were carried out to investigate the deposited films. The results reveal that a temperature of 320°C is critical for near-stoichiometric CIGS films with uniform surface morphology. Cu-rich phase particulates are found at less than this temperature. The sample deposited at 380°C gives well-crystalline single-phase CIGS film. Furthermore, the electrical and optical performances of the absorber layer are improved significantly with the increasing substrate temperature.

Influence of The Substrate-Target Angle and Sputter Temperature On The Properties of CIGS Thin Films Sputtered From Single Quaternary Target

“…On the other hand, both incident angles of 40 0 and 60 0 have no significant effect on the crystalline properties. The XRD data verifies the polycrystalline structure of CIGS thin films in the form of the chalcopyrite phase [12,13,26]. Thus, the fact that the kinetic energy of target atoms provided by the applied temperature is the main parameter that affects the crystalline formation while the incoming trajectory of the atoms towards the substrate alters the morphology of the films without having any impact on the crystallinity.…”

“…A more practical and effective way of deposition of CIGS absorber layer is the single-step sputtering by using a quaternary target [10][11][12][13][14]. Sputtering directly from a single target provides good uniformity of thin film and simplification of process by eliminating the postselenization-which paves the way for mass production along with the reduced material cost [15][16][17][18].…”

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe2 Thin Films for Photovoltaic Applications

“…At lower temperatures, ad atoms form more nucleation centers, whereas at higher temperatures, ad atoms gain higher mobility, causing them to grow uniformly with larger nuclei. 46 The surface morphology was compact and uniform for the as-grown samples. For the samples grown at higher substrate temperatures, larger grains with significant grain boundaries were observed as counterparts of the RT samples.…”

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

“…The bandgap of CuIn1-xGaxSe exhibits the lowest value (Eg=1.02 eV) when x = 0 and the highest value (Eg=1.68 eV) when x = 1 [1]. The structure and physical properties of CIGSe films are influenced by inherent defects [7], underscoring the importance of minimizing stoichiometry deviation in the film fabrication process. To achieve a high-quality single-phase chalcopyrite film, optimization of process parameters, such as sputtering powers, is essential.…”