SiGe HBT with fx/fmax of 505 GHz/720 GHz

Heinemann, B.; Rücker, H.; Barth, R.; Bärwolf, Florian; Drews, Jürgen; Fischer, Gunter; Fox, A.; Fursenko, O.; Grabolla, T.; Peters, Frank; Katzer, Jens; Korn, Julian; Krüger, Andreas; Kulse, P.; Lenke, Thomas; Lisker, Marco; Marschmeyer, S.; Scheit, A.; Schmidt, D.; Schmidt, J.; Schubert, Markus Andreas; Trusch, A.; Wipf, Christian; Wolansky, D.

doi:10.1109/iedm.2016.7838335

Cited by 125 publications

(70 citation statements)

References 6 publications

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“…To design cost effective RF high speed integrated circuits for these applications, the transistors' characteristics such as the maximum available power gain frequency (f max ) and the transconductance (g m ) plays a very important role [4], [5]. The state-of-art silicon-germanium (SiGe) HBT shows a f T /f max of 505/720 GHz [6] and benefits from the silicon integration with an advantageous back-end-of-line (BEOL) environment compared to the III-V technology based transistors [7]. Accurate, repeatable and reliable S-parameter measurements of a transistor above 110 GHz are challenging but are urgently required to develop compact models for the high-speed RF circuit design [8].…”

Section: Introductionmentioning

confidence: 99%

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Yadav

Deng

Fregonèse

et al. 2020

IEEE Trans. THz Sci. Technol.

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In this paper, we present on-silicon structures onwafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal behaviour in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful true EM model of the RF probes is an essential requirement. In this process, four different RF probes used during measurements in the frequency bands 1 GHz-110 GHz, 140 GHz-220 GHz, 220 GHz-325 GHz and 325 GHz-500 GHz are designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.

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Section: Introductionmentioning

confidence: 99%

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Yadav

Deng

Fregonèse

et al. 2020

IEEE Trans. THz Sci. Technol.

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“…Several works have been reported on optimizing the high-frequency of SiGe HBT that can be found from the refs. [2] [3] [4] [5]. Also, the ref.…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering

Miao¹,

Li²,

Wen³

et al. 2020

JAMP

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In order to improve the electrical and frequency characteristics of SiGe heterojunction bipolar transistors (HBTs), a novel structure of SOI SiGe heterojunction bipolar transistor is designed in this work. Compared with traditional SOI SiGe HBT, the proposed device structure has smaller window widths of emitter and collector areas. Under the act of additional uniaxial stress induced by Si 0.85 Ge 0.15 , all the collector region, base region and emitter region are strained, which is beneficial to improve the performance of SiGe HBTs. Employing the SILVACO  TCAD tools, the numerical simulation results show that the maximum current gain β max , the Earley voltage V A are achieved for 1062 and 186 V, respectively, the product of β and V A , i.e., β × V A , is 1.975 × 10 5 V and, the peak cutoff frequency f T is 419 GHz when the Ge component in the base has configured to be a trapezoidal distribution. The proposed SOI SiGe HBT architecture has a 52.9% improvement in cutoff frequency f T compared to the conventional SOI SiGe HBTs.

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“…The extreme cost of such technologies massively restricts their range of applications, driving the search for low-cost alternatives, where silicon-based devices are the leading candidate. Silicon Germanium (SiGe) BiCMOS and HBT transistors have undergone continued improvement over the past decade, achieving an f max of up to 720 GHz [34]. Equivalent circuit models indicate a physical f max limit above 2 THz [35], [36].…”

Section: Introductionmentioning

confidence: 99%

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Campion

Zirath

et al. 2019

IEEE Trans. THz Sci. Technol.

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SiGe HBT with fx/fmax of 505 GHz/720 GHz

Cited by 125 publications

References 6 publications

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

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