Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Campion, James; Li, Yinggang; Zirath, Herbert; Oberhammer, Joachim; Hassona, Ahmed; He, Zhongxia Simon; Beuerle, Bernhard; Gomez-Torrent, Adrian; Shah, Umer; Vecchiattini, Sandro; Lindman, Richard; Dahl, Torbjørn

doi:10.1109/tthz.2019.2943572

Cited by 36 publications

(21 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An attractive solution for THz-modules is based on micromachined waveguides in silicon [52], [53]. Active and passive circuits like filters, phase shifters, switches, antennas etc can be heterogeneously integrated for operation at frequencies even beyond 1 THz.…”

Section: Integration Packaging and On-chip Integrated Antennasmentioning

confidence: 99%

Implementation Challenges and Opportunities in Beyond-5G and 6G Communication

Gustavsson

Frenger²,

Fager³

et al. 2021

IEEE J. Microw.

Self Cite

109

View full text Add to dashboard Cite

Section: Integration Packaging and On-chip Integrated Antennasmentioning

confidence: 99%

Implementation Challenges and Opportunities in Beyond-5G and 6G Communication

Gustavsson

Frenger²,

Fager³

et al. 2021

IEEE J. Microw.

Self Cite

109

View full text Add to dashboard Cite

“…The assembled waveguide halves are then bonded together [see Fig. 7(b)] by using the thermocompression bonding process [9], [10], [42], [44]. No differences in the mechanical stability when bonding structures with or without RFS could be observed.…”

Section: B Assemblymentioning

confidence: 99%

“…Silicon micromachined waveguides were demonstrated with very low losses, for instance 0.02 dB/mm in the 220-330-GHz band [9]. The authors have already proposed a sub-THz micromachined integration platform for telecommunication links [10] with integrated SiGe microwave monolithic integrated circuits (MMICs), but no filtering function has been shown in this technology platform yet. Frequency diplexers fulfilling their specifications in terms of insertion loss (IL), in-band flatness, selectivity, and rejection are one of the most challenging components to fabricate in the THz frequency range due to the stringent requirements on the accuracy of the geometrical features, which, for higher complexity filters, requires high precision in micro level even at the relatively low D-band frequencies.…”

mentioning

confidence: 99%

Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique

Zhao

Glubokov

Campion

et al. 2020

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

A D-band waveguide diplexer, implemented by silicon micromachining using releasable filling structure (RFS) technique to obtain high-precision geometries, is presented here for the first time. Prototype devices using this RFS technique are compared with devices using the conventional microfabrication process. The RFS technique allows etching large waveguide structures with nearly 90 • sidewall angles for the 400-µm-tall waveguides. The diplexer consists of two direct-coupled cavity six-pole bandpass filters, with the lower and the upper band at 130-134 and 141-148.5 GHz, respectively. The measured insertion loss of the two bands is 1.2 and 0.8 dB, respectively, and the measured return loss is 20 and 18 dB, respectively, across 85% of the passbands. The worst case adjacent channel rejection is better than 59 dB. The unloaded quality factors of a single cavity resonator are estimated from the measurements to reach 1400. Furthermore, for the RFS-based micromachined diplexer, an excellent agreement between measured and simulated data was observed, with a center frequency shift of only 0.8% and a bandwidth deviation of only 8%. In contrast to that, for the conventionally micromachined diplexer of this high complexity, the filter poles are not well controllable, resulting in a large center frequency shift of 3.5%, a huge bandwidth expanding of over 60%, a poor return loss of 6 and 10 dB for the lower and the upper band, respectively, and an adjacent channel rejection of only 22 dB.

show abstract

“…The use of silicon as a mechanical material is well-documented [17]. Silicon has previously been used to realize terahertz packaging [18], integration [19], and wafer probing solutions [20]. Silicon layers can be manufactured with ±0.1−µm thickness uncertainty.…”

mentioning

confidence: 99%

Silicon Micromachined Waveguide Calibration Standards for Terahertz Metrology

Campion

Oberhammer

2021

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

This article presents precision silicon micromachined waveguide calibration standards for use with terahertz vector network analyzers. This enables the creation of precise, highly repeatable, and traceable terahertz waveguide standards, surpassing the limits of current metrology techniques. A single silicon-on-insulator wafer with the appropriate device and handle layer thicknesses is used to implement a wide range of calibration and verification standards. The design of the standards is discussed from mechanical, electrical, and end-user perspectives. Silicon is shown to be the most promising material for the realization of precision metrology standards. We outline the potential to scale the presented design to at least 2.6 THz. Eight types of WM-570 standard, totaling 15 prototypes, are fabricated and characterized between 325 and 500 GHz. Despite some fabrication anomalies, all devices offer excellent performance. The best micromachined standards offer a return loss in excess of 40 dB, an insertion loss of below 0.1 dB, and a phase error of less than 1 • . The standards are utilized in both one-and two-port calibrations, including the multiline through-reflect-line algorithm. These are benchmarked against calibrations performed using conventional metallic standards, with a high degree of agreement observed between error-corrected measurements of a range of test devices.

show abstract

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Abstract: This is the accepted version of a paper published in IEEE Transactions on Terahertz Science and Technology. This paper has been peer-reviewed but does not include the final publisher proof-corrections or journal pagination.

Cited by 36 publications

References 61 publications

Implementation Challenges and Opportunities in Beyond-5G and 6G Communication

Implementation Challenges and Opportunities in Beyond-5G and 6G Communication

Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique

Silicon Micromachined Waveguide Calibration Standards for Terahertz Metrology

Contact Info

Product

Resources

About