SiGe driver circuit with high output amplitude operating up to 23 Gb/s

A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar Technology

“…Moreover, in order to reduce some critical parasitic inductances in the local-ground connections (Fig. 6b), the collectors of the transistors in the EFs pairs (the same for the diodes) have been connected as close as possible with a wide ground plane [7]. The feedback lines from the filter to the lower differential pair in the double mixer and the lines which apply the input signals to the stacked mixer show exactly the same length.…”

“…In the layout (Fig. 6b) we took care to design the interconnection lines between every emitter follower as short as possible to avoid instability effects like ringing [6,7]. Moreover, in order to reduce some critical parasitic inductances in the local-ground connections (Fig.…”

A CMOS laser driver with independently adjustable DC and modulation currents for data rates up to 2.5 Gb/s

“…Special attention has been given to keep routes as short as possible while using large width to minimize parasitic inductance. Care has been taken as to virtually avoid any overlap between supply and signal lines [4]. For effective biasing and minimization of substrate bouncing, substrate contact arrays have been extensively used.…”

“…Therefore integrated circuits operating in the range of gigahertz are of prime interest and such circuits do exist in silicon bipolar or GaAs processes [1][2][3][4]. Although CMOS technology is not capable of addressing the ultra-high data rates the successful use of standard CMOS will provide the low cost solution required for mass installation of systems operating at moderate rates of 1-2.5 Gbls.…”

A 10Gb/s, 3.3v, laser/modulator driver with high power efficiency

“…[1]... [4]). Depending on the laser the total required peak current may be as large as 100 mA and the forward voltage may be 1.8 V. For all lasers the dark current may not be zero, as the laser cannot start up in time when lasering has stopped.…”