SiGe bipolar technology for automotive radar applications

Böck, J.; Schäfer, H.; Aufinger, Klaus; Stengl, R.; Boguth, S.; Schreiter, R.; Rest, M.; Knapp, H.; Wurzer, M.; Perndl, W.; Bottner, T.; Meister, T.F.

doi:10.1109/bipol.2004.1365751

Cited by 138 publications

(42 citation statements)

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“…Superior RF performance has been demonstrated, through vertical and lateral scalings, on low-power high-speed SiGe HBTs [1]- [3]. Recently, SiGe power HBTs have emerged as competitive alternatives to III-V devices for RF power amplification in wireless handsets and cell phones [4]- [6].…”

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confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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Abstract-The base-region optimization of SiGe power heterojunction bipolar transistors (HBTs) for high-frequency microwave power amplification is investigated. It is found that employing a heavily doped base region in conjunction with a high Ge content of proper profile can effectively improve the large-signal power-gain values of SiGe HBTs while maintaining their high breakdown voltages and thus allow them to be efficiently operated with high power at higher microwave frequencies. More importantly, with such a base-region optimization, not only lateral-scaling requirements can be relaxed but also a common-base configuration for power amplification using these devices can be favored, which further enhances the power-gain values of SiGe power HBTs at high frequencies. Load-pull experimental results are presented to show the highest figure-of-merit power performance of SiGe power HBTs with an optimized base region. The power performance of SiGe power HBTs operated at X -band with different base-region designs was also compared to illustrate the significant benefits that result from the base-region optimization.Index Terms-Common base (CB), doping profile, figureof-merit (FOM), load pull, microwave, power amplification, power gain, SiGe heterojunction bipolar transistors (HBTs).

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confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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“…The chips are manufactured in an advanced 200 GHz f T SiGe:C bipolar process based on the technology presented in [17]. The transistors achieve the highest f T at a current density of 5 mA/ȝm 2 .…”

Section: Technologymentioning

confidence: 99%

SiGe Circuits for Spread Spectrum Automotive Radar

Trotta¹,

Dehlink

Knapp

et al. 2007

2007 IEEE International Conference on Ultra-Wideband

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-This paper presents circuits in SiGe bipolar technology for spread spectrum automotive radar applications in the band from 77 to 81 GHz. They cover the transmit and receive paths. The transmitter integrates a voltage controlled oscillator, a prescaler by 64, a 10 bit linear feedback shift register (LFSR), and a biphase modulator. The system has been optimized in order to achieve a range resolution less than 12 cm and an unambiguous range of 124 m. The quadrature receiver frontend consists of a single-ended low-noise amplifier (LNA), balancedto-unbalanced converters, two fully differential direct-conversion mixers, LO buffer amplifiers, and a branchline coupler for I/Q generation. The presented systems show that millimeter-wave circuits in SiGe technology can achieve high integration levels along with high performance. They are well suited for application in spread spectrum automotive radar systems.

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“…TECHNOLOGY The mixer was implemented in an advanced 200 GHz f T SiGe:C bipolar technology, based on the technology presented in [1]. The maximum oscillation frequency f max is 275 GHz.…”

Section: Circuit Designmentioning

confidence: 99%

“…The well-known advantages of Silicon-Germanium bipolar technology, like low-cost, small size, or high integrability, have recently been expanded to highest-frequency applications [1], [2], [3], [4]. The main application in the 77 GHz frequency range is automotive radar from 76 GHz to 77 GHz.…”

Section: Introductionmentioning

confidence: 99%