A Highly Linear SiGe Double-Balanced Mixer for 77 GHz Automotive Radar Applications

Abstract

Abstract-

Characterization and modeling of nonlinear mixer behavior for 77‐GHz radar systems

“…In the meantime, for the proper dual-band operation of the general transmission lines, those electrical length (h) is set as [6] h ¼ f 1…”

“…Silicon-Germanium (SiGe) is a suitable technology for producing cost-efficient microwave circuits for 77 GHz automotive radar. In the used technology, appropriate diodes for designing passive mixers are not available, whereby active mixers (Gilbert cell mixers) are implemented [5,6]. The structure of a Gilbert cell mixer includes a high number of nonlinear components, which increases the complexity of circuit modeling.…”

0.13‐μM CMOS Q‐band leveled‐LO subharmonic mixer with injection‐locked frequency‐divider quadrature generator

“…Recently, advanced CMOS technology which is favorable for circuit design at high frequencies has been demonstrated in the microwave and millimeter-wave regimes [1][2][3][4]. Mixers are one of the key parts in a transceiver.…”

“…Mixers are one of the key parts in a transceiver. A double-balanced Gilbert cell mixer has advantages in terms of a conversion gain, isolation, and compact size [2][3][4]. A subharmonic mixer is still a popular choice and overcomes conventional difficulties in generating high-frequency local oscillator (LO) signals for a fundamental mixer [5] because an LO frequency is only half of the RF frequency.…”

“…However, it is well known that the attenuation constant of the on-chip transmission line increases as the operating frequency increases due to losses in the conductive silicon substrate as well as the series resistance of the metallization. Various methods, such as high-resistivity silicon [2], front/back side micromachining [3], porous silicon [4], and proton implantation [5], have been reported to reduce the substrate loss. Nevertheless, most of the proposed methods are very difficult, if not impossible, to be integrated into the standard CMOS technology because of their inherent nonstandard processing steps.…”