SiGe-BiCMOS based technology platforms for mm-wave and radar applications

Mai, Christian; Kaynak, Mehmet

doi:10.1109/mikon.2016.7492062

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…TiN-Ti-caped Al interconnect lines approximately 0.5 µm thick were fabricated by a state-of-the-art 130 nm SiGe BiCMOS process on a 200 mm-diameter high-resistivity (10 kΩ•cm) Si wafer [5]. Lines with designed widths of 160 and 360 nm (actual widths 190 and 390 nm due to process bias as determined by SMM) were embedded in 1.3 µm thick SiO 2 , then chemo-mechanically polished to a flatness of approximately 70 nm as indicated by the AFM profile in Fig.…”

Section: Methodsmentioning

confidence: 99%

Scanning microwave microscopy of buried CMOS interconnect lines with nanometer resolution

Jin

Xiong

Marstell

et al. 2018

Int. J. Microw. Wireless Technol.

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This paper reports scanning microwave microscopy of CMOS interconnect aluminum lines both bare and buried under oxide. In both cases, a spatial resolution of 190 ± 70 nm was achieved, which was comparable or better than what had been reported in the literature. With the lines immersed in water to simulate high-k dielectric, the signal-to-noise ratio degraded significantly, but the image remained as sharp as before, especially after averaging across a few adjacent scans. These results imply that scanning microwave microscopy can be a promising technique for non-destructive nano-characterization of both CMOS interconnects buried under oxide and live biological samples immersed in water.

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Section: Methodsmentioning

confidence: 99%

Scanning microwave microscopy of buried CMOS interconnect lines with nanometer resolution

Jin

Xiong

Marstell

et al. 2018

Int. J. Microw. Wireless Technol.

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“…Those employed in the ATLAS and CMS timing layer have an area of about 1.6 mm 2 . An alternative approach to obtain the signal-to-noise ratio necessary to achieve such time resolution comes from the exploitation of the unparalleled analog performance of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBT) to produce a fast signal amplification with low noise at low amplifier current density [6,7]. An R&D effort started in recent years to exploit commercial SiGe BiCMOS -a mainstream microelectronic technology with Very Large Scale Integration (VLSI) capability -to produce monolithic pixel detectors with small pixel size and time resolution comparable with that of LGAD, without recurring to an avalanche gain mechanism [8,9].…”

Section: Introductionmentioning

confidence: 99%

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

et al. 2022

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A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9-0.2 +0.1)% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 μA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.

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“…An alternative approach to obtain the signal-to-noise ratio necessary to achieve such time resolution comes from the exploitation of the unparalleled analog performance of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBT) to produce a fast signal amplification with low noise at low amplifier current density [4] [5]. An R&D effort started in recent years to exploit commercial SiGe BiCMOS -a mainstream microelectronic technology with Very Large Scale Integration (VLSI) capability -to produce monolithic pixel detectors with small pixel size and time resolution comparable with that of LGAD, without recurring to an avalanche gain mechanism [6] [7].…”

Section: Introductionmentioning

confidence: 99%

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Iacobucci,

Paolozzi,

Valerio

et al. 2021

Preprint

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A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 𝜇m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9 +0.1 −0.2)% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 𝜇A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.

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SiGe-BiCMOS based technology platforms for mm-wave and radar applications

Cited by 6 publications

References 18 publications

Scanning microwave microscopy of buried CMOS interconnect lines with nanometer resolution

Scanning microwave microscopy of buried CMOS interconnect lines with nanometer resolution

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

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