This paper introduces the first results of dielec-7 tric spectroscopy characterization of glioblastoma cells, measur-8 ing their crossover frequencies in the ultra-high-frequency range 9 (above 50 MHz) by dielectrophoresis (DEP) techniques. Exper-10 iments were performed on two glioblastoma lines U87-MG and 11 LN18 that were cultured following different conditions, in order 12 to achieve different phenotypic profiles. We demonstrate here that 13 the presented DEP electrokinetic method can be used to discrim-14 inate the undifferentiated from the differentiated cells. In this 15 study, microfluidic lab-on-chip systems implemented on bipolar-16 complementary oxide semiconductor technology are used allowing 17 single cell handling and analysis. Based on the characterizations 18 of their own intracellular features, both the selected glioblastoma 19 (GBM) cell lines cultured in distinct culture conditions have shown 20 clear differences of DEP crossover frequency signatures compared 21 to the differentiated cells cultured in a normal medium. These re-22 sults support the concept and validate the efficiency for cell char-23 acterization in glioblastoma pathology. 24 Index Terms-BiCMOS chip, biological cell manipulation, 25 glioblastoma cells, high frequency dielectrophoresis. 26 I. INTRODUCTION 27 G LIOBLASTOMA (GBM) is one of the most frequent and 28 the most aggressive tumors of the central nervous system.
We demonstrate for the first time the embedded integration of a Radio Frequency Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated circuits in a BiCMOS Back-end-of-line (BEOL). The switch shows state-of-the-art performance parameters. The ¿off¿ to ¿on¿ capacitance ratio is 1:10 providing excellent isolation in the mm-wave frequency range. Insertion loss and isolation are found to fall below 1.65 dB and to exceed 15 dB, respectively, in the frequency range of 60 GHz to 110 GHz. Feasibility of switch integration into single chip RF designs is demonstrated for a dual-band voltage controlled oscillator (VCO). No performance degradation was observed after ten billion hot-switching cycles
The design of a radiation-efficient D-band end-fire onchip antenna utilizing a localized backside etching (LBE) technique, as well as an antenna-in-package (AiP) on a low-cost organic substrate is presented. Quasi-Yagi-Uda antennas are chosen for end-fire radiation because of their compact size. The on-chip antenna is realized in the back-end of the line (BEOL) process of a 130 nm SiGe BiCMOS technology, while the inpackage antenna is realized in liquid crystal polymer technology for comparison. The on-chip antenna design is optimized to meet both process reliability specifications and radiation performance, and corresponding design guidelines are provided. The fabricated on-chip antennas show state-of-the-art performance with a peak gain of 4.7 dBi and, simulated radiation efficiency of 82%, and measured radiation efficiency of 72-76% using the Gain/Directivity and Wheeler-cap methods at 143 GHz. The antenna demonstrates a 3-dB gain bandwidth of more than 30 GHz and 10-dB impedance bandwidth greater than 20 GHz (14% impedance bandwidth). The measurements of the onpackage end-fire antenna showed very comparable results with a peak measured gain of 6 dBi and a simulated and measured radiation efficiency of 92% and 86% at 143 GHz. These results demonstrate that highly efficient on-chip end-fire antenna implementation is possible in standard commercially available BiCMOS process.
Index Terms-Antenna-in-package (AiP), liquid crystal polymer (LCP), localized back-side etching, mm-waves, micromachining, on-chip antenna, SiGe BiCMOS 0018-926X (c)
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