Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Iacobucci, G.; Paolozzi, L.; Valerio, P.; Moretti, T.; Cadoux, F.; Cardarelli, R.; Cardella, R.; Débieux, S.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Gurimskaya, Y.; Kotitsa, R.; Magliocca, C.; Martinelli, F.; Milanesio, M.; Münker, M.; Nessi, M.; Picardi, A.; Saidi, J.; Rücker, H.; Pinto, M. Vicente Barreto; Zambito, S.

doi:10.48550/arxiv.2112.08999

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…In past few years, CMOS Monolithic Active Pixel Sensors (MAPS) have widely demonstrated to meet the requirements of tracking detectors as a viable alternative to hybrid pixels in high-energy physics experiments [1][2][3]. Since the spatial density of particle collisions expected in near-future high-energy physics experiments will dramatically increase, silicon detectors are requested to provide also precise time information to perform an accurate reconstruction of tracks [4,5], particle identification [6] or as beam-induced background mitigation technique (see, for instance, ref.…”

Section: Introductionmentioning

confidence: 99%

First results on monolithic CMOS detector with internal gain

Follo,

Gioachin,

Ferrero

et al. 2024

J. Inst.

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In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 μm. This prototype is formed by a pixel array where each pixel has a total size of 100 μm× 250 μm and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the doping profile extracted from C(V) measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future doping concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlapping events and it will also be crucial for Particle IDentification (PID).

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Section: Introductionmentioning

confidence: 99%

First results on monolithic CMOS detector with internal gain

Follo,

Gioachin,

Ferrero

et al. 2024

J. Inst.

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“…The MONOLITH Horizon 2020 ERC Advanced project utilises the SG13G2 130 nm SiGe BiCMOS process by IHP to produce low noise, low power and very fast frontend electronics, implemented in a fully sensitive high granularity monolithic sensor able to provide excellent timing. The foundry masks of the first prototype of the MONOLITH project [12] were used to produce a proof-of-concept picosecond avalanche detector (PicoAD) [13], a novel detector that implements a continuous deep gain layer [14]. At a power density of 2.7 W/cm 2 , this proof-of-concept monolithic ASIC provided full efficiency and an average time resolution of 17 ps, varying between 13 ps at the center of the pixel and 25 ps in the inter-pixel region [15].…”

Section: Introductionmentioning

confidence: 99%

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Moretti,

Milanesio,

Cardella

et al. 2024

J. Inst.

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Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 × 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, read out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 × 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 × 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.

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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Cited by 2 publications

References 11 publications

First results on monolithic CMOS detector with internal gain

First results on monolithic CMOS detector with internal gain

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

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