Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
T. Moretti,
M. Milanesio,
R. Cardella
et al.
Abstract:Samples of the monolithic silicon pixel ASIC prototype
produced in 2022 within the framework of the Horizon 2020 MONOLITH
ERC Advanced project were irradiated with 70 MeV protons up to a
fluence of
1 ×
1016 neq/cm2, and then tested using a beam of
120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch
hexagonal pixels, read out by low noise and very fast frontend
electronics produced in a 130 nm SiGe BiCMOS technology process.
The dependence on the proton fluence of the efficiency and … Show more
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