Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Abstract

Articles you may be interested inSingle-electron transistors based on self-assembled silicon-on-insulator quantum dots Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process Appl.

Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

“…The SET has been reported for many semiconductor materials, e.g. Si [2], III-V GaAs [6], carbon nanotubes [7,8], as well as metallic [9], and even ferromagnetic materials [10,11].…”

“…A single-electron transistor (SET) exhibits Coulomb oscillation and quantized V th shifts which suggests the possibility of utilizing it as a memory device with ultralow power consumption [1,2]. Other application concepts have been exploited, e.g.…”

Single Electron Devices

“…146 A Si single electron transistor with a nanoscale floating dot gate stacked on a Coulomb island with potential memory applications was fabricated by Nakajima et a/. 147 ' 148 Metallic single electron devices using two different resist masks have been fabricated by Weimann et al U9 in a process that overcomes the problem of insulation of the edges by building a suspended island with no contact to the edges or with the substrate.…”

Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K

“…Figure 4 shows the calculated behavior of P(n) as a function of gate voltage V b for Tϭ77 K, nϭ1,2, and C ͚ ϭ1.3 aF ͑as obtained in our device͒, indicating that there are V g regions where the overlap in the electron number of two states has a relatively high probability. Nakajima et al 14 showed that for a particular temperature whether the overlap is weak or strong is controlled by C ͚ , which varies from device to device. Thus Fig.…”

“…Another reason for this nonequilibrium memory state could be the electron number fluctuation in the dot as suggested by Nakajima et al 14 The probability P(n) that n electrons ͑with discrete charge͒ are stored can be expressed as…”