1998
DOI: 10.1142/s0129156498000099
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Single Electron Devices

Abstract: In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the field of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. It then describe… Show more

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Cited by 3 publications
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“…An interesting domain, outside of the CMOS mainstream, has been presented by single-electron transistors (SETs), [67,68]. Single electron transistors are devices with a capacitance so small that a single electron can generate a measurable voltage (above the thermal voltage).…”
Section: Beyond the Moore's Lawmentioning
confidence: 99%
“…An interesting domain, outside of the CMOS mainstream, has been presented by single-electron transistors (SETs), [67,68]. Single electron transistors are devices with a capacitance so small that a single electron can generate a measurable voltage (above the thermal voltage).…”
Section: Beyond the Moore's Lawmentioning
confidence: 99%