2006
DOI: 10.1109/jstqe.2006.880611
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Si Photonic Wire Waveguide Devices

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Cited by 149 publications
(49 citation statements)
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“…Because Si has very large thermo-optical coefficient (∼1.86 × 10 −4 [K −1 ]), some optical devices based on thermooptical (TO) effect have been proposed using Si wire waveguide [4]. However, the variation of refractive index of Si which is brought by thermo-optical effect degrades the characteristics of some optical devices such as conventional directional coupler; the coupling efficiency varies with the temperature.…”
Section: Temperature Dependencementioning
confidence: 99%
“…Because Si has very large thermo-optical coefficient (∼1.86 × 10 −4 [K −1 ]), some optical devices based on thermooptical (TO) effect have been proposed using Si wire waveguide [4]. However, the variation of refractive index of Si which is brought by thermo-optical effect degrades the characteristics of some optical devices such as conventional directional coupler; the coupling efficiency varies with the temperature.…”
Section: Temperature Dependencementioning
confidence: 99%
“…This makes the Si-nanowire-based PLCs highly polarization-sensitive. One can use a square Si nanowire (e.g., 300 nm×300 nm [47]) to obtain a polarization-independent Si nanowire. However, the scattering loss is usually much larger than that for a 500 nm×250 nm Si nanowire [14,15] and it is difficult to control the width and height very precisely.…”
Section: Characteristics Of Si Nanowiresmentioning
confidence: 99%
“…Recently, a great deal of research has been carried out in silicon photonics, since the use of silicon enables dense integration and low cost fabrication of various optical circuits using CMOS-compatible processes [1,2,3]. On the other hand, silicon wire waveguides have polarization dependent loss (PDL), and polarization dependent wavelength characteristics [4,5,6].…”
Section: Introductionmentioning
confidence: 99%