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Carbon chemistry exhibits a rich variety in bonding patterns, with homo- or heteronuclear multiple bonds involving sp-hybridized carbon atoms as found in molecules such as acetylenes, nitriles, allenes and carbon dioxide. Carbon's heavier homologues in group 14 of the periodic table--including silicon, germanium and tin--were long thought incapable of forming multiple bonds because of the less effective p(pi)-p(pi) orbital overlap involved in the multiple bonds. However, bulky substituents can protect unsaturated bonds and stabilize compounds with formally sp-hybridized heavy group-14 atoms: stable germanium, tin and lead analogues of acetylene derivatives and a marginally stable tristannaallene have now been reported. However, no stable silicon compounds with formal sp-silicon atoms have been isolated. Evidence for the existence of a persistent disilaacetylene and trapping of transient 2-silaallenes and other X = Si = X' type compounds (X, X' = O, CR2, NR, and so on) are also known, but stable silicon compounds with formally sp-hybridized silicon atoms have not yet been isolated. Here we report the synthesis of a thermally stable, crystalline trisilaallene derivative containing a formally sp-hybridized silicon atom. We find that, in contrast to linear carbon allenes, the trisilaallene is significantly bent. The central silicon in the molecule is dynamically disordered, which we ascribe to ready rotation of the central silicon atom around the molecular axis.

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The first dialkyl-substituted silicon-chalcogen doubly bonded compounds [R2Si=X; R2=1,1,4,4-tetrakis(trimethylsilyl)butane-1,4-diyl, X = S (4), Se (5), and Te (6)]were synthesized by the reactions of an isolable dialkylsilylene R2Si: (3) with phosphine sulfide, elemental selenium, and elemental tellurium, respectively. Systematic changes of characteristics of silicon-chalcogen double bonds are elucidated by X-ray analysis, UV-vis spectroscopy, and DFT calculations. In the solid state, the unsaturated silicon atom in 4-6 adopts planar geometry and the extent of the shortening of Si=X double bonds from the corresponding Si-X single bonds decreases in the order 4 > 5 > 6. In the absorption spectra of 4-6, pi -->pi* transition bands are observed distinctly in addition to n -->pi* transition bands. Both the n -->pi* and pi -->pi* transitions are red-shifted in the order 4 < 5 < 6, and the difference between the energies of the two transitions is kept almost constant among 4-6. The tendency is explained using the qualitative perturbation theory and is reproduced by the DFT calculations for model silanechalcogenones. Addition reactions of water, methanol, and isoprene to 4-6 are reported.

We demonstrate room temperature continuous-wave laser operation at 1.3 mum in a photonic crystal nanocavity with InAs/GaAs self-assembled quantum dots by optical pumping. By analyzing a coupled rate equation and the experimental light-light characteristic plot, we evaluate the spontaneous emission coupling factor of the laser to be ~ 0.22. Three-dimensional carrier confinement and a low transparent carrier density due to volume effect in a quantum dot system play important roles in the cw laser operation at room temperature as well as a high quality factor photonic crystal nanocavity.