No abstract

No abstract

We report the fabrication of InAs/GaAs quantum dot solar cells (QDSCs) with enhanced photocurrent and no degradation in open circuit voltage (VOC) compared to a solar cell grown without QDs and composed solely of wetting layers. Notably, the achievement of such high VOC does not require electronic coupling. We report QDSCs with a light absorption range extended up to 1.3 μm and evidence a trade-off between VOC and QD ground-state energy. These results are of major significance to the design of high efficiency QDSCs.

No abstract

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).