We report the fabrication of InAs/GaAs quantum dot solar cells (QDSCs) with enhanced photocurrent and no degradation in open circuit voltage (VOC) compared to a solar cell grown without QDs and composed solely of wetting layers. Notably, the achievement of such high VOC does not require electronic coupling. We report QDSCs with a light absorption range extended up to 1.3 μm and evidence a trade-off between VOC and QD ground-state energy. These results are of major significance to the design of high efficiency QDSCs.

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