Short-wavelength solar-blind detectors-status, prospects, and markets

Razeghi, Manijeh

doi:10.1109/jproc.2002.1021565

Cited by 292 publications

(154 citation statements)

References 37 publications

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“…[1][2][3] Maximizing the Schottky barrier height, minimizing reverse leakage current, and minimizing their variation over large area are all key to advancing the performance of these devices and to enhance manufacturability. Considerable efforts continue to be made to explore factors that influence GaN Schottky diodes, which historically had been motivated by basic studies of III-N materials and metal/GaN interfaces.…”

Section: Introductionmentioning

confidence: 99%

Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

Arehart

Moran

Speck

et al. 2006

Journal of Applied Physics

107

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The impact of threading dislocation density on Ni/ n-GaN Schottky barrier diode characteristics is investigated using forward biased current-voltage-temperature ͑I-V-T͒ and internal photoemission ͑IPE͒ measurements. Nominally, identical metal-organic chemical vapor deposition grown GaN layers were grown on two types of GaN templates on sapphire substrates to controllably vary threading dislocation density ͑TDD͒ from 3 ϫ 10 7 to 7 ϫ 10 8 cm −2 . I-V-T measurements revealed thermionic emission to be the dominant transport mechanism with ideality factors near 1.01 at room temperature for both sample types. The Schottky barrier heights showed a similar invariance with TDD, with measured values of 1.12-1.13 eV obtained from fitting the I-V-T results to a thermionic emission-diffusion model. The I-V-T results were verified by IPE measurements made on the same diodes, confirming that the Ni/ n-GaN barrier heights do not show a measurable TDD dependence for the TDD range measured here. In apparent contrast to this result is that the measured forward bias I-V characteristics indicate a shift in the observed forward bias turn-on voltage such that at the higher TDD value investigated here, a larger turn-on voltage ͑lower current͒ is observed. This difference is attributed to localized current blocking by high potential barrier regions surrounding threading dislocations that intersect the Ni/ GaN interface. A simple model is presented that reconciles both the observed voltage shift and variations in the extracted Richardson constant as a function of threading dislocation density. With this model, an average local barrier surrounding dislocation of ϳ0.2 V is obtained, which diverts current flow across the forward biased Schottky interface to nondislocated regions.

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Section: Introductionmentioning

confidence: 99%

Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

Arehart

Moran

Speck

et al. 2006

Journal of Applied Physics

107

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“…This structure contains the relatively thick layer with a varied composition. This arrangement reduces the stress which is associated with the lattice constant mismatch of the AlGaN active layer and the AlN buffer which value is 2.4% [7]. The doping process of the N + -AlGaN contact layer is another source of stress and defects.…”

Section: Technology Of Measured Detectorsmentioning

confidence: 99%

Low-frequency noises as a tool for UV detector characterisation

Ćwirko

Bielecki

Ćwirko

et al. 2006

Opto-Electronics Review

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Ultraviolet (UV) semiconductor detectors are mainly made of materials with wide energy gap, i.e., of AlGaN, GaP, SiC, and diamond. The article describes methodology of measurements of characteristics of low-frequency noises of UV detectors and presents the developed measuring system. Basing on analysis of noise characteristics of detectors, an optimal working point of detector can be determined. The results of measurements of noise characteristics of UV detectors made of AlGaN are shown. The measurements have been carried out in wide range of temperatures for several values of a detector supply voltage.

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“…1,2 Accordingly, this kind of photodetectors can accurately respond to a very weak signal even under sun or room illumination, providing an incomparable advantage especially for applications such as ozone-hole monitoring, flame detection and missile early warning. [3][4][5] At present, Si-based photodiode is the most commonly used in commercial applications due to its high compatibility with the mature silicon process.…”

Section: Introductionmentioning

confidence: 99%

“…6 Nevertheless, it is also sensitive to the infrared, visible and near-UV radiations due to the small bandgap (E g ) of Si (1.1 eV), 7,8 and accordingly expensive and cumbersome Woods optical filters have to be employed in solar-blind DUV detection system. 1,2 In this case, photodetectors based on wide-bandgap semiconductors are regarded as better alternatives. Among them, monoclinic Ga 2 O 3 ( β-Ga 2 O 3 ) with an intrinsic E g of 4.9 eV is naturally suitable for solar-blind DUV detection, 9,10 and so can avoid the alloying process in material growth for AlGaN 11,12 and ZnMgO.…”

Section: Introductionmentioning

confidence: 99%

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

et al. 2016

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A four-terminal photodetector was fabricated on the (2¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.

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Short-wavelength solar-blind detectors-status, prospects, and markets

Cited by 292 publications

References 37 publications

Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

Low-frequency noises as a tool for UV detector characterisation

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

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