Shallow junction doping technologies for ULSI

Jones, E.C.; Ishida, E.

doi:10.1016/s0927-796x(98)00013-8

Cited by 115 publications

(63 citation statements)

References 172 publications

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“…Additionally, the source gases used in ion implantation are also invariably harmful from a health and environmental perspective. 4 An alternative approach to ion implantation is spin-on doping, which consists of depositing a dopant-containing solution onto a semiconductor surface, followed by a diffusion anneal step.…”

Section: Introductionmentioning

confidence: 99%

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

O’Connell

Verni

Gangnaik

et al. 2015

ACS Appl. Mater. Interfaces

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This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 × 10 20 atoms cm −3 . Characterization of doped structures after the MLD process confirmed that they remained defect-and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.

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Section: Introductionmentioning

confidence: 99%

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

O’Connell

Verni

Gangnaik

et al. 2015

ACS Appl. Mater. Interfaces

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“…The process has low energy requirements, and the product replaces building materials that result in emission of CO 2 and other waste byproducts (168).…”

Section: Renewable Resourcesmentioning

confidence: 99%

Green chemistry: the emergence of a transformative framework

Anastas

Beach

2007

Green Chemistry Letters and Reviews

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Since the Twelve Principles of Green Chemistry were formulated in the 1990s, there have been tremendous successes in developing new products and processes to be more compatible with human health, the environment, and sustainability goals. This review gives a sampling of research successes from the last 20 years, including advances in synthetic efficiency, application of alternative synthetic methods, use of less hazardous solvents and reagents, and development of renewable resources for chemical feedstocks. The future of green chemistry will depend on innovations that consolidate and integrate these achievements that have been made, using all Twelve Principles as a framework for intentional design. Designing for sustainability and reduced hazard should not be viewed as constraining, but rather as providing the freedom to explore and invent, bridging continents and scientific disciplines to create new solutions.

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“…Nevertheless, in this innovative design it is not possible to resort to a high-temperature thermal process to repair the implantation-induced damage associated with the back-wafer contact doping. This damage consists of Si interstitials, which are injected into the silicon during the implantation [6]. Since they can travel easily in silicon, they are not confined to the actual implanted contact region.…”

Section: Introductionmentioning

confidence: 99%

Reliability Issues Related to Laser-Annealed Implanted Back-Wafer Contacts in Bipolar Silicon-on-Glass Processes

Lorito

Gonda

Liu

et al.

2006 25th International Conference on Microelectronics

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Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the lowtemperature back-wafer processing.

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Shallow junction doping technologies for ULSI

Cited by 115 publications

References 172 publications

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

Green chemistry: the emergence of a transformative framework

Reliability Issues Related to Laser-Annealed Implanted Back-Wafer Contacts in Bipolar Silicon-on-Glass Processes

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