SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

Grurmann, Kai; Walter, D.; Herrmann, Martin; Gliem, F.; Kettunen, H.; Ferlet-Cavrois, V.

doi:10.1109/redw.2010.6062521

Cited by 6 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the fact that particles appear from any direction in space, the SEE responses were evaluated for different tilt (pitch) angles (0°, 43…45° and 60°). It has been shown in several works that the tilt angles can increase cross section, independent of the effective LET [9][10][11]. Additionally, NASA Godard Flight Center has shown in [12] that the SEFI response is increased with the tilt angle for the AD9364, which is basically the same device here studied, but just limited in 1 × 1 RX/TX configuration.…”

Section: Tilt Angle Dependiciesmentioning

confidence: 60%

Heavy Ion Induced Single Event Effects Characterization on an RF-Agile Transceiver for Flexible Multi-Band Radio Systems in NewSpace Avionics

et al. 2020

View full text Add to dashboard Cite

Nowadays, technologies have a massive impact on the design of avionic systems, even for the conservative space industry. In this paper, the single event effect (SEE) characterization of a highly integrated and radio frequency (RF) agile transceiver is being presented which is an outstanding candidate for future radio systems in NewSpace applications and space avionics. The device being investigated allows programmable re-configuration of RF specifications, where classical software-defined radios (SDR) only define an on-demand re-configuration of the signal processing. RF related configurations are untouched for common SDR and developed discretely by the specific application requirements. Due to the high integrity and complexity of the device under test (DUT), state-of-the-art radiation test procedures are not applicable and customized testing procedures need to be developed. The DUT shows a very robust response to linear energy transfer (LET) values up to 62.5 MeV.cm 2 /mg, without any destructives events and a moderate soft error rate.

show abstract

Section: Tilt Angle Dependiciesmentioning

confidence: 60%

Heavy Ion Induced Single Event Effects Characterization on an RF-Agile Transceiver for Flexible Multi-Band Radio Systems in NewSpace Avionics

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The angular dependence of FG effects is quite complex and it is a strong function of the studied technology [52][53][54]. In fact, the behavior of the FG error cross section versus the ion incidence angle depends on the shape of the sensitive volume and may vary considerably for cells with different feature size or between NAND and NOR arrays [53].…”

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

Space and terrestrial radiation effects in flash memories

Bagatin

Gerardin

Paccagnella

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We present a comprehensive review of the effects of ionizing radiation on advanced flash memories. The effects of ionizing radiation as well as the mechanisms underlying the observed phenomena are thoroughly discussed on both floating gate cells and the complex control circuitry. The covered effects are relevant for all floating-gate based flash memories that require very high levels of reliability, from critical applications at the terrestrial level to radiation-harsh environments, such as space, nuclear power plants, and high-energy physics experiments.

show abstract

“…Class (A) is differentiated further into (A1) spurious Single-Byte Upsets SBU and (A2) Multi-Byte Upsets MBU. The SEU cross section shows a strong dependence on the angle of ion incidence, which is described by an elevation angle 0 • ≤ Ψ ≤ 90 • and an azimuth angle 0 • ≤ Θ ≤ 360 • [7]. As illustrated in the example diagrams in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…As illustrated in the example diagrams in Fig. 1 [7] Gbit SLC NAND-Flash devices are organized into 4k blocks of 64 pages (i.e. rows) of 4224 bytes (i.e.…”

Section: Introductionmentioning

confidence: 99%