MBU characterization of NAND-Flash memories under heavy-ion irradiation

Grurmann, Kai; Walter, D.; Herrmann, Martin; Gliem, F.; Kettunen, H.; Ferlet-Cavrois, V.

doi:10.1109/radecs.2011.6131305

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…As a consequence of technology scaling and the higher susceptibility of FG cells to heavy-ion strikes, also multiple cell upsets (MCUs) are becoming more and more likely in advanced flash samples, also at very low LETs, especially when FG cells are irradiated with ions at tilted angles [65,66]. Figure 15 plots the percentage of MCU (over the total number of errors) as a function of ion LET, for a 25-nm MLC NAND flash memory irradiated with heavy [66].…”

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

Space and terrestrial radiation effects in flash memories

Bagatin

Gerardin

Paccagnella

2017

Semicond. Sci. Technol.

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We present a comprehensive review of the effects of ionizing radiation on advanced flash memories. The effects of ionizing radiation as well as the mechanisms underlying the observed phenomena are thoroughly discussed on both floating gate cells and the complex control circuitry. The covered effects are relevant for all floating-gate based flash memories that require very high levels of reliability, from critical applications at the terrestrial level to radiation-harsh environments, such as space, nuclear power plants, and high-energy physics experiments.

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Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

Space and terrestrial radiation effects in flash memories

Bagatin

Gerardin

Paccagnella

2017

Semicond. Sci. Technol.

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Single and Multiple Cell Upsets in 25-nm NAND Flash Memories

Bagatin

Gerardin

Paccagnella

et al. 2013

IEEE Trans. Nucl. Sci.

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We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ions, including alpha particles. Compared to multilevel cell memories of previous generations, these devices show no apparent error dependence on the program level, adherence to the cosine law, and a large number of multiple cell upsets (MCUs). Floating-gate errors were mapped to their physical location, and MCUs were studied as a function of their multiplicity, direction, particle linear energy transfer, irradiation angle, and program level

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MBU characterization of NAND-Flash memories under heavy-ion irradiation

Abstract: The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBUpattern has been measured.

Cited by 2 publications

References 9 publications

Space and terrestrial radiation effects in flash memories

Space and terrestrial radiation effects in flash memories

Single and Multiple Cell Upsets in 25-nm NAND Flash Memories

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