Space and terrestrial radiation effects in flash memories

Bagatin, M.; Gerardin, Simone; Paccagnella, A.

doi:10.1088/1361-6641/32/3/033003

Cited by 17 publications

(10 citation statements)

References 75 publications

(127 reference statements)

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“…Models that have been proposed are: 1) the temporary existence of a conducting path that shorts the FG to the substrate [47] and 2) a very fast flux of hot carriers out of the FG [48]. MLCs tend to be more sensitive to ion strike-induced upsets due to the tighter distributions [49]- [51].…”

Section: Radiation Effects In Charge Storage Memoriesmentioning

confidence: 99%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

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Section: Radiation Effects In Charge Storage Memoriesmentioning

confidence: 99%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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“…Although the presence of 10 B has been avoided in recent technologies with the removal of Borophosphosilicate glass (BPSG), it is still present inside the electronic devices as p-doping and near the back end of line (BEOL) structure as tungsten coating for the plugs connecting the drain to the copper layers [2]- [4]. These atoms of 10 B originate from the B 2 H 6 etcher gas used to improve the adhesion of tungsten in the trench contacts [5], [6]. With the technology scaling, SV and contact size decrease and consequently the amount of 10 B atoms is reduced.…”

Section: Introductionmentioning

confidence: 99%

“…Most single event effects (SEEs) are therefore due to neutrons, which above few MeV (and even below for elastic processes) can indirectly ionize the sensitive volume (SV) atoms of the device through elastic and/or inelastic reactions, depending on the initial particle energy and target material. Differently, ThNs are absorbed by the 10 B isotope, still present inside the device structure, producing nuclear fission with the ejection of an alpha particle and 7 Li, according to the 10 B(n, α) 7 Li reaction [1]. It is worth noting that highenergy neutrons (HENs) are much less efficient in inducing boron capture and fission, because the boron capture cross section shows very large values (∼3838 barns [1]) around the thermal region of 25 meV and decreases as E −1/2 with increasing energy.…”

Section: Introductionmentioning

confidence: 99%

“…These atoms of 10 B originate from the B 2 H 6 etcher gas used to improve the adhesion of tungsten in the trench contacts [5], [6]. With the technology scaling, SV and contact size decrease and consequently the amount of 10 B atoms is reduced. On the other hand, the critical charge to trigger upsets has decreased and, when lowering the supply This work is licensed under a Creative Commons Attribution 4.0 License.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Neutron-Induced SEUs in the LHC Accelerator Environment

Cecchetto

Alía

Wrobel

et al. 2020

IEEE Trans. Nucl. Sci.

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In addition to high-energy hadrons, which include neutrons, protons, and pions above 20 MeV, thermal neutrons (ThNs) are a major concern in terms of soft error rate (SER) for electronics operating in the large hadron collider (LHC) accelerator at the European Organization for Nuclear Research (CERN). Most of the electronic devices still contain Boron-10 inside their structure, which makes them sensitive to ThNs. The LHC radiation environment in different tunnel and shielded areas is analyzed through measurements and FLUKA simulations, showing that the ThN fluence can be considerably higher than the high-energy one, up to a factor of 50. State-of-the-art commercial-off-the-shelf (COTS) components such as SRAM, field-programmable gate arrays (FPGA), and Flash memories of different technologies are studied to derive the expected singleevent upset (SEU) rate due to ThNs, relative to the high-energy hadron contribution. We find that for the studied parts and most of the accelerator applications, ThNs are the dominating source of upsets with respect to the high energy particles yielding even to neglect the latter in some cases. Indeed, they can induce, in electronics, up to more than 90% of the total upsets. The estimation is performed also for ground-level and avionic applications, and although in general, ThNs are not the main source of SER, in Flash memories they can play the same role as high energy neutrons. Related radiation hardness assurance (RHA) considerations for the qualification of components and systems against ThNs are presented.

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“…This work extends previous studies of thermal rectification 4,13 and NDTR through vacuum 11 and also parallels recent ideas based on exotic non-volatile memory systems, 12,14,15 which have recently been proposed as viable alternatives to traditional electrostatic memory. 16,17 Thermal bistability in triply resonant structures.-We begin by briefly describing the main mechanism behind the proposed thermal bistability scheme, leaving quanti- and Tc, respectively, while the middle body has variable temperature T0. The system reaches a steady state when the net heat exchanged Jt = J h − Jc = 0 (blue dot), where J h and Jc denote the heat flux rates between the hot and cold bodies and the middle body.…”

mentioning

confidence: 99%

Thermal bistability through coupled photonic resonances

Khandekar

Rodríguez

2017

Applied Physics Letters

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We present a scheme for achieving thermal bistability based on the selective coupling of three optical resonances. This approach requires one of the resonant frequencies to be temperature dependent, which can occur in materials exhibiting strong thermo-optic effects. For illustration, we explore thermal bistability in two different passive systems, involving either a periodic array of Si ring resonators or parallel GaAs thin films separated by vacuum and exchanging heat in the near field. Such a scheme could prove useful for thermal memory devices operating with transition times hundreds of milliseconds.Rapid progress in the synthesis and processing of materials at small lengthscales has created demand for understanding thermal phenomena in nanoscale systems. 1,2 Recent interest in harnessing excess heat that is readily available at the nanoscale has culminated in several proposed thermal devices 3 with various functionalities, including thermal rectifiers, 4 thermal memory, 5 thermal transistors, 6 phononic logic gates, 7 and phonon waveguides. 8 . In this paper, we propose a scheme to achieve thermal bistability based on the coupling between three or more optical resonances. Our approach complements and builds on recently proposed ideas 5,9-11 in several ways, described further below.A thermal, bistable system can be used as a memory device that stores thermal information by maintaining the temperature of the system in one of two or more possible states. Realizing such temperature bistability requires a nonequilibrium thermal circuit supporting multiple steady states. Such a circuit was first proposed several years ago based on the concept of negative differential thermal resistance (NDTR), which relies on the ability to achieve heat flux rates between objects that decrease with increasing temperature differences. While first proposed in a model system consisting of a lattice of one-dimensional nonlinear mechanical oscillators, 5 recent implementations of NDTR have instead sought to exploit radiative energy transfer between slabs separated by nanometer gaps and heated to very high ≈ 1500K temperatures. 11,12 . Here, we propose a simple and experimentally feasible, all-optical scheme based on a system of three optical resonances that builds and expands on a recently proposed and related scheme which requires materials supporting metal-insulator phase-transitions. 9,10 Instead, our approach exploits common materials exhibiting strong thermo-optic effects and relies instead on thermal bistability induced by a resonant mechanism involving three optical resonances-microring cavities supporting travelling-wave resonances or polar-dielectric slabs supporting surface-propagating polaritonic resonances. This work extends previous studies of thermal rectification 4,13 and NDTR through vacuum 11 and also parallels recent ideas based on exotic non-volatile memory systems, 12,14,15 which have recently been proposed as viable alternatives to traditional electrostatic memory. 16,17 Thermal bistability in triply resonant stru...

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Space and terrestrial radiation effects in flash memories

Cited by 17 publications

References 75 publications

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Thermal Neutron-Induced SEUs in the LHC Accelerator Environment

Thermal bistability through coupled photonic resonances

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