Series resistance of silicided ohmic contacts for nanoelectronics

Chieh, Yuen-Shung; Perera, A.; Krusius, J.P.

doi:10.1109/16.144679

Cited by 15 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…10 Incorporation of Ge into Si offers the possibility to increase the dopant concentration in the layer and hence decrease resistivity. 11 This can replace the conventional implanted S/D junctions in MOSFETs, which are limited in terms of contact resistivity and lateral abruptness.…”

mentioning

confidence: 99%

Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications

Menon

Lindgren

Persson

et al. 2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

The selective growth of Si-buffer/Si 1Ϫx Ge x /Si-cap structures (0.14 Ͻ x Ͻ 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B-or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistances, e.g., 195 and 260 ⍀/ᮀ for 420 Å thick, B-doped Si 0.81 Ge 0.19 and P-doped Si 0.71 Ge 0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.

show abstract

mentioning

confidence: 99%

Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications

Menon

Lindgren

Persson

et al. 2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…The current crowding effect, that leads to the non-uniform distribution of the current density near the edge of the metal contact was reported earlier for nanostructures like silicon MOSFETs [1], carbon-nanotubes with side contacts [2], graphene sheets [3], and other side-bonded contacts and structures lying flat on the substrate. In the present work, we focus on the size-dependent effect of current crowding in end-bonded contacts for the ZnO NW structure.…”

Section: The Effect Of Current Crowdingmentioning

confidence: 86%

“…We have found that current crowding in ZnO NWs plays an essential role by increasing parasitic resistance at the edge of the downscaled contacts. The parasitic resistance will lead to a local temperature rise at the metal-semiconductor interface [1]. Generally, there are two main classes of nanowire contact geometries: side-bonded contacts which are produced when metal contacts are deposited on to nanostructures, and end-bonded contacts which normally have an intimate metal contact at the top of the nanowire [5].…”

Section: Introductionmentioning

confidence: 99%

“…The transport properties of metal nanocontacts fabricated for various nanostructure devices [1][2][3] have become to be recognized as a major challenge to device functionality. Attention has been drawn to their geometrical properties [4,5], since the repeatable manufacture is still challenging and transport at the nanoscale is poorly understood.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Kryvchenkova

Cobley

Kálna

2015

Materials Today: Proceedings

View full text Add to dashboard Cite

Nanoscale electron tunneling and thermionic transport via the metal-semiconductor interface of ZnO nanowires is found to be strongly affected by the metal contact shape, the metal-semiconductor interface radius and the nanowire radius. Our full 3D simulations show that the current crowding effect occurs for end-bonded contacts due to the geometry variation in the case of Schottky Au-ZnO nanowire interfaces. The change in the geometry will also lead to a change in the electrical behavior of the contact from Schottky to Ohmic which can substantially reduce the contact resistance.

show abstract

“…The contact resistance refers at resistance between the silicide contact and the diffusion layer and is strong dependent on the silicide layer thickness, the junction doping concentration and the silicide material [42], [43]. Under the silicidediffusion contact the current flow increases with the increase of the silicide thickness and a significant current is pushed in the silicon region under the silicide [44].…”

Section: Contact Resistancementioning

confidence: 99%

Carrier mobility and series resistance MOSFET modeling

et al. 2004

View full text Add to dashboard Cite

The scaling-down evolution of semiconductor devices will ultimately attend fundamental limits as transistor reach the nanoscale aria. In this context the MOSFET models must give the process variations and the relevant characteristics like current, conductance, transconductance, capacitances, flicker thermal or high frequency noise and distortion. The new challenge of nanotechnology needs very accurate models for active devices. The design of linear analog circuits lacks models for state-of-the-art MOS transistors to accurately describe distortion effects. This is mainly due to inaccurate modelling of the mobility degradation effect i.e. the dependence of carrier mobility in the inversion layer on the gate normal electric field. For short-channel devices the influence of series resistance becomes important and depends on the gate voltage. The drain current expression incorporating a new mobility relation obtained from quantum mechanical transport analysis and the series resistance influence is in good agreement with experiment.

show abstract

Series resistance of silicided ohmic contacts for nanoelectronics

Cited by 15 publications

References 11 publications

Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications

Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications

The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Carrier mobility and series resistance MOSFET modeling

Contact Info

Product

Resources

About