The selective growth of Si-buffer/Si 1Ϫx Ge x /Si-cap structures (0.14 Ͻ x Ͻ 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B-or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistances, e.g., 195 and 260 ⍀/ᮀ for 420 Å thick, B-doped Si 0.81 Ge 0.19 and P-doped Si 0.71 Ge 0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.