2015
DOI: 10.1016/j.matpr.2015.04.052
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The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Abstract: Nanoscale electron tunneling and thermionic transport via the metal-semiconductor interface of ZnO nanowires is found to be strongly affected by the metal contact shape, the metal-semiconductor interface radius and the nanowire radius. Our full 3D simulations show that the current crowding effect occurs for end-bonded contacts due to the geometry variation in the case of Schottky Au-ZnO nanowire interfaces. The change in the geometry will also lead to a change in the electrical behavior of the contact from Sch… Show more

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Cited by 3 publications
(3 citation statements)
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“…Tunnelling was considered for both electrons and holes. Using the universal Schottky tunnelling model, the localized tunnelling rates were calculated through the structure of the semiconductor close to the interface [21,22].…”
Section: Methodsmentioning
confidence: 99%
“…Tunnelling was considered for both electrons and holes. Using the universal Schottky tunnelling model, the localized tunnelling rates were calculated through the structure of the semiconductor close to the interface [21,22].…”
Section: Methodsmentioning
confidence: 99%
“…The authors also argued that it is important to avoid current crowding so as to avoid early failures. [22,23] From these considerations, it is inferred that at high enough current densities, the CCE can become significant, causing specimens to fail earlier.…”
Section: Tensile Propertiesmentioning
confidence: 99%
“…[29][30][31][32] The carrier transport model uses a drift-diffusion approximation for the GaAs sample assuming semi-infinite geometry, incorporating tunneling between the tip and the sample which is selfconsistently coupled with Poisson's equation, thus accounting for long-range Coulomb interactions.…”
Section: Methodsmentioning
confidence: 99%