Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Manjanath, Aaditya; Samanta, Atanu; Pandey, Tribhuwan; Singh, Abhishek K.

doi:10.1088/0957-4484/26/7/075701

Cited by 90 publications

(55 citation statements)

References 36 publications

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“…For example, the application of uniaxial stress can break the symmetry and enhance in-plane anisotropy. 72 Other effects include electron-phonon coupling enhancement, 73 superconductivity, 74 semiconductor to metal transition, 75 band gap modification, 15 and direct-indirect band gap transition 12 ( Fig. 5).…”

Section: Effects Of Stress and Mechanical Propertiesmentioning

confidence: 99%

Recent advances in synthesis, properties, and applications of phosphorene

et al. 2017

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Since its first fabrication by exfoliation in 2014, phosphorene has been the focus of rapidly expanding research activities. The number of phosphorene publications has been increasing at a rate exceeding that of other two-dimensional materials. This tremendous level of excitement arises from the unique properties of phosphorene, including its puckered layer structure. With its widely tunable band gap, strong in-plane anisotropy, and high carrier mobility, phosphorene is at the center of numerous fundamental studies and applications spanning from electronic, optoelectronic, and spintronic devices to sensors, actuators, and thermoelectrics to energy conversion, and storage devices. Here, we review the most significant recent studies in the field of phosphorene research and technology. Our focus is on the synthesis and layer number determination, anisotropic properties, tuning of the band gap and related properties, strain engineering, and applications in electronics, thermoelectrics, and energy storage. The current needs and likely future research directions for phosphorene are also discussed. , there has been a quest for new two-dimensional (2D) materials aimed at fully exploring new fundamental phenomena stemming from quantum confinement and size effects. This quest has spurred new areas of research with rapid growth from both theoretical and experimental fronts aimed at technological advancements. Among recently discovered 2D materials, phosphorene is one of the most intriguing due to its exotic properties and numerous foreseeable applications.2 This review discusses recent advances in phosphorene research with special emphasis on: (i) fabrication and techniques for rapid identification of the number of layers; (ii) anisotropic behavior; (iii) band gap and property tuning; (iv) strain engineering and mechanical properties; (v) devices and applications; and (vi) future directions.2D materials composed of a single-atom-thick or a singlepolyhedral-thick layer can be grouped into diverse categories.

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Section: Effects Of Stress and Mechanical Propertiesmentioning

confidence: 99%

Recent advances in synthesis, properties, and applications of phosphorene

et al. 2017

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“…They are very sensitive to external perturbations, which may make them promising candidates for various types of sensor [96,[146][147][148][149][150]. The interband optical transitions of few-layer phosphorene cover a wide spectrum range from visible to midinfrared that is important for telecommunication and solar energy harvesting [132,151,152].…”

Section: Perspectives and Challengesmentioning

confidence: 99%

Emergent elemental two-dimensional materials beyond graphene

Zhang¹,

Rubio²,

Lay³

2017

J. Phys. D: Appl. Phys.

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Two-dimensional (2D) materials may offer the ultimate scaling beyond the 5 nm gate length.The difficulty of reliably opening a band gap in graphene has led to the search for alternative, semiconducting 2D materials. Emerging classes of elemental 2D materials stand out for their compatibility with existing technologies and/or for their diverse, tunable electronic structures.Among this group, black phosphorene has recently shown superior semiconductor performances. Silicene and germanene feature Dirac-type band dispersions, much like graphene. Calculations show that most group IV and group V elements have one or more stable 2D allotropes, with properties potentially suitable for electronic and optoelectronic applications. Here, we review the advances in these fascinating elemental 2D materials and discuss progress and challenges in their applications in future opto-and nano-electronic devices.

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“…Recently a theoretical study by Manjanath et. al 35 reported a reversible semiconductor to metal transition in bilayer phosphorene by applying normal compressive strain. In another work, Xiang et al 31,36 reported colossal positive magneto-resistance in black phosphorus for P ≥ 1.2 GPa and observed a non-trivial π Berry phase from the Shubnikov-de Haas oscillation measurement.…”

Section: Introductionmentioning

confidence: 99%

Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and theory

et al. 2017

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We report high pressure Raman experiments of Black phosphorus (BP) up to 24 GPa. The line widths of first order Raman modes A 1 g , B2g and A 2 g of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density functional analysis reveals that this is associated with the anomalies in electron-phonon coupling at the semiconductor to topological insulator transition through inversion of valence and conduction bands marking a change from trivial to nontrivial electronic topology. The frequencies of B2g and A 2 g modes become anomalous in the rhombohedral phase at 7.4 GPa, and new modes appearing in the rhombohedral phase show anomalous softening with pressure. This is shown to originate from unusual structural evolution of black phosphorous with pressure, based on first-principles theoretical analysis.

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Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Cited by 90 publications

References 36 publications

Recent advances in synthesis, properties, and applications of phosphorene

Recent advances in synthesis, properties, and applications of phosphorene

Emergent elemental two-dimensional materials beyond graphene

Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and theory

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