This article summarizes technical advances contained in the fifth major release of the Q-Chem quantum chemistry program package, covering developments since 2015. A comprehensive library of exchange–correlation functionals, along with a suite of correlated many-body methods, continues to be a hallmark of the Q-Chem software. The many-body methods include novel variants of both coupled-cluster and configuration-interaction approaches along with methods based on the algebraic diagrammatic construction and variational reduced density-matrix methods. Methods highlighted in Q-Chem 5 include a suite of tools for modeling core-level spectroscopy, methods for describing metastable resonances, methods for computing vibronic spectra, the nuclear–electronic orbital method, and several different energy decomposition analysis techniques. High-performance capabilities including multithreaded parallelism and support for calculations on graphics processing units are described. Q-Chem boasts a community of well over 100 active academic developers, and the continuing evolution of the software is supported by an “open teamware” model and an increasingly modular design.
The ability of carbon to exist in many forms across dimensions has spawned search in exploring newer allotropes consisting of either, different networks of polygons or rings. While research on various 3D phases of carbon has been extensive, 2D allotropes formed from stable rings are yet to be unearthed. Here, we report a new sp2 hybridized two-dimensional allotrope consisting of continuous 5-6-8 rings of carbon atoms, named as “pentahexoctite”. The absence of unstable modes in the phonon spectra ensures the stability of the planar sheet. Furthermore, this sheet has mechanical strength comparable to graphene. Electronically, the sheet is metallic with direction-dependent flat and dispersive bands at the Fermi level ensuring highly anisotropic transport properties. This sheet serves as a precursor for stable 1D nanotubes with chirality-dependent electronic and mechanical properties. With these unique properties, this sheet becomes another exciting addition to the family of robust novel 2D allotropes of carbon.
Abstract. Phosphorene, a two-dimensional (2D) analog of black phosphorous, has been a subject of immense interest recently, due to its high carrier mobilities and a tunable bandgap. So far, tunability has been predicted to be obtained with very high compressive/tensile in-plane strains, and vertical electric field, which are difficult to achieve experimentally. Here, we show using density functional theory based calculations the possibility of tuning electronic properties by applying normal compressive strain in bilayer phosphorene. A complete and fully reversible semiconductor to metal transition has been observed at ∼ 13.35% strain, which can be easily realized experimentally. Furthermore, a direct to indirect bandgap transition has also been observed at ∼ 3% strain, which is a signature of unique band-gap modulation pattern in this material. The absence of negative frequencies in phonon spectra as a function of strain demonstrates the structural integrity of the sheets at relatively higher strain range. The carrier mobilities and effective masses also do not change significantly as a function of strain, keeping the transport properties nearly unchanged. This inherent ease of tunability of electronic properties without affecting the excellent transport properties of phosphorene sheets is expected to pave way for further fundamental research leading to phosphorene-based multi-physics devices.PACS numbers: 71.15. Mb, 71.20.Mq, Submitted to: Nanotechnology Semiconductor to metal transition in bilayer phosphorene under normal compressive strain2
Silicene, a graphene analogue of silicon, has been generating immense interest due to its potential for applications in miniaturized devices. Unlike planar graphene, silicene prefers a buckled structure. Here we explore the possibility of stabilizing the planar form of silicene by Ni doping using first principles density functional theory based calculations. It is found that planar as well as buckled structure is stable for Ni-doped silicene, but the buckled sheet has slightly lower total energy. The planar silicene sheet has unstable phonon modes. A comparative study of the mechanical properties reveals that the in-plane stiffness of both the pristine and the doped planar silicene is higher compared to that of the buckled silicene. This suggests that planar silicene is mechanically more robust. Electronic structure calculations of the planar and buckled Ni-doped silicene show that the energy bands at the Dirac point transform from linear behavior to parabolic dispersion. Furthermore, we extend our study to Ge and Sn sheets that are also stable and the trends of comparable mechanical stability of the planar and buckled phases remain the same.
Using the phonon Boltzmann transport formalism and density functional theory based calculations, we show that stanene has a low thermal conductivity. For a sample size of 1×1 µm 2 (L × W ), the lattice thermal conductivities along the zigzag and armchair directions are 10.83 W/m-K and 9.2 W/m-K respectively, at room temperature, indicating anisotropy in the thermal transport. The low values of thermal conductivity are due to large anharmonicity in the crystal resulting in high Grüneisen parameters, and low group velocities. The room temperature effective phonon mean free path is found to be around 17 nm indicating that the thermal transport in stanene is completely diffusive in nature. Furthermore, our study brings out the relative importance of the contributing phonon branches and reveals that, at very low temperatures, the contribution to lattice thermal conductivity comes from the flexural acoustic (ZA) branch and at higher temperatures it is dominated by the longitudinal acoustic (LA) branch. We also show that lattice thermal conductivity of stanene can further be reduced by tuning the sample size and creating rough surfaces at the edges. Such tunability in the lattice thermal conductivity in stanene suggests its applications in thermoelectric devices.
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