Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Zhao, Hongping; Arif, Ronald A.; Ee, Yik-Khoon; Tansu, Nelson

doi:10.1109/jqe.2008.2004000

Cited by 223 publications

(215 citation statements)

References 35 publications

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“…35,43 However, the use of GaN barriers will result in relatively weak electron confinement in the GaNAs QW. The use of AlGaN tensile barriers 44 will potentially result in the strain compensation and improved barrier confinement in type-I GaNAs QW structure. In addition, the use of dilute-As GaNAs alloy had previously been suggested in type-II InGaN / dilute-As GaNAs QWs 27,28 for addressing the charge separation issue in the QW.…”

Section: Resultsmentioning

confidence: 99%

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Tan

Tansu

2015

AIP Advances

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Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

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Section: Resultsmentioning

confidence: 99%

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Tan

Tansu

2015

AIP Advances

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“…The self-consistent six-band theory is used to take account of the effect of carrier screening in InGaN quantum wells [40]. Here, the Auger recombination coefficients are taken to be 1 10 cm /s [7], [41].…”

Section: Resultsmentioning

confidence: 99%

On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

Zhang

Tan

et al. 2013

J. Display Technol.

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“…In the case of Al In Ga N N). A self-consistent approach was employed to set more accurate energy levels and give the actual band positions [38].…”

Section: Qw Design For Emitting Near White Lightmentioning

confidence: 99%

Design of a GaN White Light-Emitting Diode Through Envelope Function Analysis

Khoshnegar

Sodagar

Eftekharian

et al. 2010

IEEE J. Quantum Electron.

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Abstract-In this paper, we present an envelope function analysis technique for the design of the emission spectra of a white quantum-well light-emitting diode (QWLED). The nanometric heterostructure that we are dealing with is a multiple QW, consisting of periods of three single QWs with various well thicknesses. With the aid of 6 6 Luttinger Hamiltonian, we employ the combination of two methods, k p perturbation and the transfer matrix method, to acquire the electron and hole wave functions numerically. The envelope function approximation was considered to obtain these wave functions for a special basis set. While adjacent valence sub-bands have been determined approximately, the conduction bands are approximated as parabolic. The effect of Stokes shift has also been taken into account. The dipole moment matrix elements for interband atomic transitions are evaluated via the correlation between the electron and hole envelope functions, for both orthogonal polarizations, thus simplifying the calculation of the photoluminescence intensity. Spatial variations in the hole/electron wave functions have been examined with the introduction of piezoelectric and spontaneous polarization internal fields. We theoretically establish the possibility of a highly efficient InGaN red emitter, resulting in a uniform luminescence in red, green, and blue emissions from a white light emitting diode by adjusting the material composition, internal field, and well thickness.Index Terms-Envelope function analysis, GaN, k p method, optical intensity spectrum, white LED.

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Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Cited by 223 publications

References 35 publications

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

Design of a GaN White Light-Emitting Diode Through Envelope Function Analysis

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