2015
DOI: 10.1063/1.4906569
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First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Abstract: Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical fin… Show more

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Cited by 23 publications
(15 citation statements)
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“…Recent work conducted by Delaney and coworkers indicated that interband Auger recombination contributes considerably to the efficiency droop of InGaN QWs. [29][30][31][32] So the IQE and output power of structure B are the highest due to successful suppression of Auger recombination.…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
“…Recent work conducted by Delaney and coworkers indicated that interband Auger recombination contributes considerably to the efficiency droop of InGaN QWs. [29][30][31][32] So the IQE and output power of structure B are the highest due to successful suppression of Auger recombination.…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
“…[158][159][160][161][162][163] Figure 6 shows the case of GaN 1 − x As x , where the substantial bandgap reduction occurs with a relatively low As content of x 10% or less. [162][163][164][165][166] Simulations show that using dilute-anion III-nitrides [164,165,167,168] in active regions can enable red emission. [169] Another novel semiconductor approach is to use Er ions in GaN to create redemitting LEDs.…”
Section: Solutions For Higher Efficiencies Of Green and Red Emittersmentioning
confidence: 99%
“…This finding is in good agreement with previously theoretical [29] and experimental [8] studies. Likewise, many efforts have been made to reduce Auger effect, including study of dilute-As GaNAs alloy with potentially lower Auger recombination rate [30], [31], local doping modulation [32], increase of the active layer thickness [9], and replacement of conventional GaN barriers with thin AlGaN barriers [22], etc.…”
Section: Introductionmentioning
confidence: 99%