Selective Epitaxial Deposition of Gallium Arsenide in Holes

Shaw, Don W.

doi:10.1149/1.2424153

Cited by 93 publications

(34 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The islands were grown in conditions identical to those corresponding to Fig. 4, but Mg in the form of (MeCp) 2 Mg was added in the vapour phase with [Mg]/ [Ga] % 0.14, V R /V C reaches a value of 4 [65][66][67].…”

Section: Morphology and Defectsmentioning

confidence: 99%

“…This density is reduced by one order of magnitude using an appropriate 3D nucleation layer and by three orders of magnitude by the newly developed process of epitaxial lateral overgrowth (ELO) applied to GaN. However, this technique is not new. Growth anisotropies in HVPE were reported in the mid sixties [2]. Lateral overgrowth has been implemented to reduce defects in several epitaxial systems, mainly GaAs/Si.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Epitaxial Lateral Overgrowth of GaN

Beaumont

Vennéguès

Gibart

2001

phys. stat. sol. (b)

191

View full text Add to dashboard Cite

Since there is no GaN bulk single crystal available, the whole technological development of GaN based devices relies on heteroepitaxy. Numerous defects are generated in the heteroepitaxy of GaN on sapphire or 6H‐SiC, mainly threading dislocations (TDs). Three types of TDs are currently observed, a type (with Burgers vector 1/3〈$11 \bar{2}0$〉); c type (with 〈0001〉) and mixed a+c (1/3〈$11 \bar{2}3$〉). The Epitaxial Lateral Overgrowth (ELO) technology produces high quality GaN with TD densities in the mid 106 cm—2, linewidth of the low‐temperature photoluminescence (PL) near‐bandgap recombination peaks <1 meV and deep electron traps reduced below 1014 cm—3 (compared to mid 1015 cm—3 in standard GaN). Numerous modifications of the ELO process have been proposed in order either to avoid technological steps (mask‐less ELO) or to improve it (pendeo‐epitaxy). Basically developed on either sapphire or 6H‐SiC, the ELO technology is also achievable on (111)Si or (111)3C‐SiC/Si provided that an appropriate buffer layer is grown to avoid cracks. More sophisticated technologies have been implemented to further increase the useable part of the ELO GaN surface (two technological steps, three‐step ELO). Unfortunately, in‐depth understanding of the basic ELO process is still missing, i.e. of the growth anisotropy and bending of dislocations.

show abstract

Section: Morphology and Defectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of GaN

Beaumont

Vennéguès

Gibart

2001

phys. stat. sol. (b)

191

View full text Add to dashboard Cite

show abstract

“…Growth SiSubstrate Perhaps the most desirable approach is to selectively etch holes into the Si substrate and refill them GaAs PolyGaAs with GaAs.This works well with deposition of GaAs in holes in a GaAs substrate[40], but the lattice and Simultaneous thermal mismatch limitations Poly/Single may be magnified when GaAs is Deposition SiSubstrate deposited in holes in a Si substrate because of the exposure of different crystallographic orientations and the geometrical constraints.GaAs…”

mentioning

confidence: 79%

Epitaxial GaAs on Si: Progress and Potential Applications

Shaw

1987

MRS Proc.

Self Cite

View full text Add to dashboard Cite

Recent successes, such as the demonstration of a iK SRAM, have established epitaxial GaAs on Si substrates as a promising technology rather than a device designer's dream. For the first time we can seriously consider combining the individual electronic and optical properties of GaAs and Si within a single epitaxial structure. Applications for GaAs on Si range from those that simply utilize the Si as a low-cost, large-area passive substrate with superior strength and thermal conductivity to the long-sought multifunction integrated circuits where Si and III-V components are integrated within a single monolithic chip. This paper will attempt to provide a realistic appraisal of the potential applications of epitaxial GaAs on Si with emphasis on the special demands imposed by each application and barriers that must be circumvented.

show abstract

“…Although anomalously low mobilities are commonly observed experimentally, anomalously high mobilities have also been observed in several semiconductors, including silicon where an accumulation layer was induced on a high-resistance n-type sample by an HF treatment (8) and GaAs which was grown under gallium-rich conditions (9). Mobilities which appear to be anomalously high have also been observed in other compound semiconductors which were grown under metal-rich conditions and which may have metallic inclusions or precipitates (10).…”

Section: By Y=omentioning

confidence: 98%

Growth Mechanism for Germanium Deposition near a SiO[sub 2]-Ge Boundary

Silvestri

Ghez

Sedgwick

1972

J. Electrochem. Soc.

View full text Add to dashboard Cite

Enhanced growth (ridge growth) of germanium on germanium near an oxide-germanium boundary has been studied in the Ge-H-CI system as a function of temperature and oxide pad width. A model is presented assuming that surface diffusion of some germanium-containing species occurs along the SiO2 pads, thereby feeding additional material to the germanium at the pad edge to form the ridge. It is shown that volume diffusion effects alone cannot explain the data. It appears that the reaction at the oxide-germanium boundary is much faster than surface diffusion and that adsorption of germanium-bearing species on the oxide mask constitutes a rate-limiting step.

show abstract

Selective Epitaxial Deposition of Gallium Arsenide in Holes

Cited by 93 publications

References 1 publication

Epitaxial Lateral Overgrowth of GaN

Epitaxial Lateral Overgrowth of GaN

Epitaxial GaAs on Si: Progress and Potential Applications

Growth Mechanism for Germanium Deposition near a SiO[sub 2]-Ge Boundary

Contact Info

Product

Resources

About