Growth Mechanism for Germanium Deposition near a SiO[sub 2]-Ge Boundary

Abstract

Enhanced growth (ridge growth) of germanium on germanium near an oxide-germanium boundary has been studied in the Ge-H-CI system as a function of temperature and oxide pad width. A model is presented assuming that surface diffusion of some germanium-containing species occurs along the SiO2 pads, thereby feeding additional material to the germanium at the pad edge to form the ridge. It is shown that volume diffusion effects alone cannot explain the data. It appears that the reaction at the oxide-germanium boundary is much faster than surface diffusion and that adsorption of germanium-bearing species on the oxide mask constitutes a rate-limiting step.

Selective Area Masked Growth (Nano to Micro)

“…To understand more completely the growth dynamics in SAG, several growth models have been proposed by different groups [12,14,[67][68][69][70][71]. The dynamics involved in these epitaxial processes can be well described under many conditions by the mass transport limited model.…”

Self Consistent Model For InP Selective Regrowth by Hydride Vapour Phase Epitaxy

“…The anisotropic growth behaviour in these directions was explained qualitatively earlier by considering the difference in bonding configurations 12) and change of dangling bonds in these two directions. 13) Here, based on a treatment by Silvestri et al 14) for Ge migration on SiO 2 pads we quantify the energy term 1/2 [E d − E m ] (where E d and E m are the desorption energy and activation energy of surface migration, respectively) for two principal axes namely [110] and [110]. Actually this term is different for different directions and hence causes the anisotropy in the surface migration.…”