The methods of purification and single crystal growth of six II – V semiconducting compounds are discussed and crystallographic data are presented. The six compounds, representing three stoichiometries, are Cd8As2 , CdAs2 , normalCdSb , Zn3As2 , ZnAs2 , and normalZnSb . The compounds are thermally dissociated in the vapor phase, and the solid‐vapor equilibria of four of the compounds has been measured. Because of the thermal instability, crystal pulling was carried out in sealed quartz tubes employing magnetic suspension of the seed. Through purification of the elements and single crystal growth, high purity was attained in most of the compounds. The highest purity is represented in CdAs2 with an electron carrier concentration of 5×1014 cm−3 .

Substantial improvement of the quality of silicon epitaxial films by post-epitaxial polysilicon back-side gettering has been observed. This improvement is displayed by the reduction of defect counts revealed by the Wright etch and anodic etch and the increase of carrier lifetime characterized by the improved MOS retention time. Correlation between the defect etch pit counts and the retention time of MOS devices fabricated is reported.High quality epitaxial (epi) films are essential for achieving high yields in semiconductor devices and integrated circuit processing. Various gettering * Electrochemical Society Active Member.

No abstract