Post‐Epitaxial Polysilicon and Si3 N 4 Gettering in Silicon

Chen, M. C.; Silvestri, V. J.

doi:10.1149/1.2124121

Cited by 38 publications

(13 citation statements)

References 3 publications

(3 reference statements)

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“…The gettering effect of Si 3 N 4 layers, from chemical vapour deposition (CVD) at 700-800 C, has been reported in the literature. [39][40][41][42][43] Annealing silicon with Si 3 N 4 surface layers was shown to reduce the formation of stacking faults in the subsequent oxidation step, 39,40 as well as the microdefects in epitaxial layers on silicon. 41,42 Metallic impurities such as Cu and Au were found to be reduced.…”

Section: Discussionmentioning

confidence: 99%

“…[39][40][41][42][43] Annealing silicon with Si 3 N 4 surface layers was shown to reduce the formation of stacking faults in the subsequent oxidation step, 39,40 as well as the microdefects in epitaxial layers on silicon. 41,42 Metallic impurities such as Cu and Au were found to be reduced. 39 While Petroff et al conjectured the gettering mechanism to be due to the internal stress and non-stoichiometry of the Si 3 N 4 films, 39 Jourdan et al attributed the gettering effect to the Si 3 N 4 /Si interface which develops local stress and creates dislocations upon annealing.…”

Section: Discussionmentioning

confidence: 99%

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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu

Sun

Markevich

et al. 2016

Journal of Applied Physics

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It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu

Sun

Markevich

et al. 2016

Journal of Applied Physics

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“…Si samples which were contaminated with a uniform concentration of 2ϫ10 14 Fe cm Ϫ3 were implanted with 4ϫ10 14 cm Ϫ2 , 3.3 MeV, 10 B and then heat treated at 1000°C for 1 h. The total Fe concentration, measured by DLTS before and after the B gettering implant and anneal, is shown in Fig. 5.…”

Section: A Boron Dose Dependence Of Fe Gettering In Simentioning

confidence: 99%

“…Although a wide variety of gettering schemes has been developed for Si processing in the past decades, [9][10][11][12][13][14][15][16] two approaches are dominant in the current technology. First, intrinsic or internal gettering ͑IG͒ is achieved in the interior of Czochralski ͑Cz͒ bulk Si wafers which have been subjected to a high-low-high annealing cycle.…”

Section: Introductionmentioning

confidence: 99%

Iron gettering mechanisms in silicon

Benton¹,

Stolk²,

Eaglesham³

et al. 1996

Journal of Applied Physics

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Carrier lifetime and xray imaging correlations of an oxideinduced stacking fault ring and its gettering behavior in Czochralski siliconBoron implantation into silicon offers a unique system for studying the gettering mechanisms of Fe. Using deep level transient spectroscopy to monitor the remaining Fe in the gettered region and secondary-ion-mass spectroscopy to measure the concentration of Fe redistributed to the B region, we show that the gettering mechanisms can be quantitatively described. A combination of Fermi-level-induced Fe ϩ charge-state stabilization and Fe ϩ -B Ϫ pairing acts to lower the free energy of Fe in pϩ regions. This can lead to Fe partition coefficients as high as 10 6 at a pϩ/p interface at temperatures below Ϸ400°C. The dynamic response of the system is diffusion limited during the cooling cycle. B gettering is more effective than gettering produced by Si implantation damage and more effective than trapping by a neutral impurity such as C. These mechanisms also make a large contribution to the effective gettering of Fe by p/pϩ epitaxial silicon wafers. The Fermi-level/pairing gettering mechanism is also expected to operate for Cr and Mn.

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“…Polysilicon backside (PBS) extrinsic gettering technique has been used to remove destructive metals from semiconductor silicon devices for several decades (since 1, 2). However, the technique requires a rather high thermal budget since the gettered metals need to diffuse all the way through the silicon bulk to reach the external gettering sites.…”

Section: Introductionmentioning

confidence: 99%

Iron segregation in silicon‐on‐insulator wafer with polysilicon interlayer

Yli-Koski

Haarahiltunen

Hintsala

et al. 2012

Physica Status Solidi (a)

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We have studied iron gettering from monocrystalline silicon device layer into polycrystalline silicon (polysilicon) interlayer in thick bonded silicon‐on‐insulator (SOI) wafers. The results show that the polysilicon interlayer acts as an efficient gettering layer for iron. The gettering takes place via both the segregation and precipitation although the dominant gettering mechanism is segregation at low contamination levels. The activation energy of the segregation coefficient between the monocrystalline silicon and the polysilicon interlayer was found to be Ea = 1.9 ± 0.2 eV.

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Post‐Epitaxial Polysilicon and Si3 N 4 Gettering in Silicon

Cited by 38 publications

References 3 publications

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Iron gettering mechanisms in silicon

Iron segregation in silicon‐on‐insulator wafer with polysilicon interlayer

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