Selective Area Growth of InP and Defect Elimination on Si (001) Substrates

Abstract

We report the selective area growth of InP layers in submicron trenches on Si (001) substrates by using a thin Ge buffer layer. The antiphase domain boundaries in InP layers are suppressed by engineering the local Ge surface profile. The mechanism of atomic step formation and the corresponding method for step density control are presented. We discuss the impact of the surface profile of the Ge buffer layer on the formation of antiphase domain boundaries as well as on InP nucleation. A minimum step density of 0.25 nm1 is required to avoid antiphase domain boundaries while a higher step density substantially reduces the stacking faults and twins in the InP nucleation layer. By employing the threading dislocation necking effect and the properly controlled Ge surface profile, high-quality InP layers have been obtained in submicron trenches. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3571248] All rights reserved. Manuscript submitted January 31, 2011; revised manuscript received March 1, 2011. Published April 7, 2011. InP has been extensively used in high electron mobility transis-tors and heterojunction bipolar transistors.1,2 Recently, there has been arising interest in integrating InP and other high electron-mo-bility materials such as InGaAs on Si substrates to make high per-formance complementary metal oxide semiconductor (CMOS) devi-ces,3,4 One approach to integrate these materials on Si substrates i

Nanowire Lasers

“…Remarkable progress by IMEC in Belgium in the direct selective area growth of III-V compounds on silicon has recently allowed the growth of high-quality InP in narrow SiO 2 trenches on silicon (001) substrates by MOCVD [99]. Wang et al analyzed the lasing performances of a microlaser design similar to that proposed by Larrue et al [52], where an InGaAs/InP pillar was embedded in a silicon PhC cavity [100,101].…”

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

“…[3][4][5] The best option for the growth of such a complex ternary compound would be to make use of InP binary compounds as a buffer for the lattice matched In 0.53 Ga 0.47 As channel. [6][7][8] Nevertheless, for the integration of III-V compounds on Si substrates, many issues still need to be overcome such as the lattice mismatch (f InP/Si ¼ 8.06%) as well as the polar/non-polar interfaces resulting in the generation of crystalline defects in high density: misfit and threading dislocations, twins, stacking faults, anti-phase boundaries, which would strongly degrade the device performances. Several options have been considered to obtain high quality single crystal III-V compounds on Si with low defect density: strain relaxed buffers, 9,10 epitaxial lateral overgrowth, 11 rapid melt growth, 12 and the defect confinement technique.…”

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

“…On Si(001) substrate Chin et al fabricated Si 0. 35 Ge 0.65 -on-SiO 2 structures by deposition of a Si 0.85 Ge 0.15 layer onto a SOI substrate and subsequent two-step Ge condensation process [23]. After photolithography and dry etching lateral Si 0.…”

“…After photolithography and dry etching lateral Si 0. 35 Ge 0.65 nanowires on SiO 2 were obtained, which served for the study of selective migration enhanced epitaxy (MEE) growth of GaAs onto the nanowires (Figure 7). Owing to the pulsed Ga and As fluxes and intermittent annealing phases in MEE, selective growth is achieved even in the case of masks patterned on the micrometre scale.…”

“…The trench masks can be fabricated (i) by oxidation of the Si substrate surface, lithography and reactive ion etching, or alternatively (ii) by using processes based on the established shallow trench isolation technology [32]. In particular, selective-area MOVPE growth of InP and GaAs on trench mask patterned Si(001) substrate has attracted great interest [25,[33][34][35][36][37][38][39][40][41][42][43]. Although the detailed defect reduction mechanism depends on the trench dimensions, on the shape of the trench bottom as well as on the heteroepitaxial growth sequence and conditions, the common characteristic (Reproduced from [30], with the permission of AIP Publishing.…”