Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices

Abstract

Recently, we found a mistake in the depth profile of channeled-ion implantation into 4H-SiC (0001), where 114-keV 27 Al ions were implanted at a dose of 1.3 × 10 13 cm −2 . However, the discussion of the manuscript is unchanged. We would like to apologize for any inconvenience.The sentence and figures related to the depth profile of channeled-ion implantation into 4H-SiC ( 0001), where 114-keV 27 Al ions were implanted at a dose of 1.3 × 10 13 cm −2 , written on page 050905-3 should be corrected as shown below: line 14-16: Before correction: "As shown in Fig. 6, R max is 0.29 μm for N, 0.32 μm for B, 0.67 μm for P, and 1.06 μm for Al".After correction: "As shown in Fig. 6, R max is 0.29 μm for N, 0.32 μm for B, 0.67 μm for P, and 0.99 μm for Al". 31 P ions were implanted at a dose of 1.3 × 10 13 cm −2 . Maximum channeled range (R max ) is defined as the depth where concentration decreases to 10% of its channeled peak concentration. 21)

The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles

“…21) In the case of channeling along the crystal axis, Se periodically fluctuates as a function of the atomic number of implanted ions. 14,22,26) Se is quite small in the case of channeling implantation for Al ion. Therefore, the profile of channeled Al ions becomes extremely deeper.…”

“…Therefore, several studies have been reported on channeling implantation into 4H-SiC. [20][21][22] We also reported on channeling implantation of Al and P ions into 4H-SiC at the Solid State Devices and Manufacturing (SSDM) 2021. 23) Especially, we found that the abrupt deep profile can be formed by channeling implantation.…”

Estimation of electronic stopping cross sections of 4H-SiC for 2–26 MeV Al random-ion implantations

“…[1][2][3][4][5][6] Every Si (or C) atom is tetrahedrally surrounded by four C (or Si) atoms, and the stacking sequence of double layers (consisting of a Si layer and a C layer) along the [0001] direction is A, B, C, and B; namely, with regard to the double layer B, the adjacent double layers (A and C) shift. The symmetric structure has promoted the study of channeled-ion implantation of p-type dopants into (0001) 4H-SiC [7][8][9][10][11][12] for fabricating super-junction (SJ) devices. 13,14) This is because SJ devices require box-like acceptor profiles.…”

Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC

“…However, even for implantations 4° off from the [000-1] direction, some ions will be steered into crystal channels and these ions will contribute to a deep tail in the dopant distribution [7]. In SiC, the channeled ions may come to rest significantly deeper than the projected range of an amorphous target [4][5][6][7][8][9]. The degree of channeling varies with atomic number of implanted ions as well as the energies used.…”

“…This is expected to result in an almost Gaussian shaped depth profile. If the implantation is instead performed along a major crystal axis, the ions will follow the crystal direction substantially deeper into the crystal [1][2][3] and the concentration versus depth profile will have a broader distribution [4][5][6]. However, even for implantations 4° off from the [000-1] direction, some ions will be steered into crystal channels and these ions will contribute to a deep tail in the dopant distribution [7].…”