SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

Can Atmospheric Neutrons Induce Soft Errors in nand Floating Gate Memories?

“…9) The susceptibility of a given technology to neutron effects is linked to its susceptibility to heavy ions effects. Several reports have addressed this topic in last years [16], [17], [26]- [28], finding very similar results among a broad range of technologies, including nitride trapping devices [28]. Hence, these considerations apply in the same way to all Flash technologies.…”

Radiation Hardness of Flash and Nanoparticle Memories

“…But most important, because of the conductive nature of the floating gate, in presence of a weak spot in the tunnel oxide, possibly radiation induced, the whole charge stored could be lost with total loss of information. Even in the case that the damage does not generate device failure, data retention and device performance would be dramatically affected by this defect in the tunnel oxide (Oldham et al, 2006).…”

“…In the last decade different teams already investigated the effect of ionizing radiation on FG Flash memories and a summary on the results can be found in the works of Cellere (Cellere et al, 2004a(Cellere et al, , 2004b(Cellere et al, , 2004c(Cellere et al, , 2005 and Oldham (Oldham et al, 2006(Oldham et al, , 2007.…”

Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

“…Along with SDRAMs, NAND flash is the other major component in spacecraft memory applications [6,[40][41][42]. Like other space memory technologies, non-volatile memories have evolved from early one-time programmable PROMs, to EPROMs, to EEPROMs, to the current generation of singleand multi-level cell NAND flash technologies.…”