Second-order nonlinear silicon-organic hybrid waveguides

Alloatti, Luca; Korn, D.; Weimann, C.; Koos, C.; Freude, W.; Leuthold, Juerg

doi:10.1364/oe.20.020506

Cited by 40 publications

(32 citation statements)

References 41 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These modes can be excited efficiently with special mode converters [47]. By a thorough numerical simulation of the dispersion of the optical modes involved, we find that for a fixed pump frequency and certain waveguide dimensions a pair of signal and idler frequencies exist satisfying the phase-matching condition.…”

Section: Phase-matchingmentioning

confidence: 94%

“…More recently, a method of achieving phase-matching based on birefringence in strained silicon waveguides has been proposed [45], but the efficiency of the device relies on nonlinearities which have not been shown so far in waveguides of the proposed size [46]. Finally, the potentially high efficiencies of SOH second-order nonlinear waveguides have already been discussed [14], but unfortunately no waveguide design has been proposed so far [47].…”

Section: Difference-frequency Generation (Dfg)mentioning

confidence: 99%

See 1 more Smart Citation

Silicon-organic hybrid devices

et al. 2013

Self Cite

View full text Add to dashboard Cite

Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order nonlinear materials allow building high-speed and low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on a 90 GHz bandwidth phase modulator, and on a 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By using liquid-crystal claddings instead, we show experimentally that phase shifters with record-low power consumption and ultra-low voltage-length product of V π L = 0.06 Vmm. Secondorder nonlinear materials, moreover, allow creating nonlinear waveguides for sum-or difference-frequency generation, and for lowest-noise optical parametric amplification. These processes are exploited for a large variety of applications, like in the emerging field of on-chip generation of mid-IR wavelengths, where pump powers are significantly smaller compared to equivalent devices using third-order nonlinear materials. In this work, we present the first SOH waveguide design suited for second-order nonlinear processes. We predict for our device an amplification of 14 dB/cm assuming a conservative χ (2) -nonlinearity of 230 pm/V and a CW pump power as low as 20 dBm.

show abstract

Section: Phase-matchingmentioning

confidence: 94%

Section: Difference-frequency Generation (Dfg)mentioning

confidence: 99%

Silicon-organic hybrid devices

et al. 2013

Self Cite

View full text Add to dashboard Cite

show abstract

“…An alternative way is to integrate other materials with strong second-order susceptibility onto Group IV waveguides (see e.g., [145]). For chalcogenide glasses, different poling schemes are proposed to produce the secondorder nonlinearity [181].…”

Section: Methodsmentioning

confidence: 99%

“…Many nonlinear effects have been reported recently in silicon photonics touching the mid-IR wavelength range [60,61,106,108,114,115,[135][136][137][138][139][140][141][142][143][144][145]. It is noted that most of them address the short-wavelength end of the mid-IR, from 2 to 2.5 μm, which is mainly the short-wave IR [144] or transition from near-IR to mid-IR.…”

Section: Introductionmentioning

confidence: 99%

“…It is noted that most of them address the short-wavelength end of the mid-IR, from 2 to 2.5 μm, which is mainly the short-wave IR [144] or transition from near-IR to mid-IR. Little was reported in longer wavelength beyond 2.5 μm [136,138,142,145]. In fact, there are about two octaves of bandwidth in the mid-IR (e.g., from 2.5 to 10 μm) available, much wider than that in the near-IR.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

View full text Add to dashboard Cite

Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

show abstract

Integrated Photonic Nanofences: Combining Subwavelength Waveguides with an Enhanced Evanescent Field for Sensing Applications

et al. 2015

View full text Add to dashboard Cite

Photonic nanofences consisting of high aspect ratio polymeric optical subwavelength waveguides have been developed for their application into photonic sensing devices. They are up to millimeter long arrays of 250 nm wide and 6 μm high ridges produced by an advanced lithography process on a silicon substrate enabling their straightforward integration into complex photonic circuits. Both simulations and experimental results show that the overlap of the evanescent fields propagating from each photonic nanofence allows for the formation of an effective waveguide that confines the overall evanescent field within its limits. This permits a high interaction with the surrounding medium which can be larger than 90% of the total guided light intensity (approximately 20000 times larger than the evanescent field of a standard waveguide with equivalent dimensions). In this work, we not only investigate the photonic properties of these structures but also demonstrate their successful integration into a photonic sensor. An absorbance-based sensor for the determination of lead in water samples is therefore achieved by the combination of the photonic nanofences with an ion-sensitive optical membrane. The experimental results for lead detection in water show a sensitivity of 0.102 AU/decade, and a linear range between 10(-6) M and 10(-2) M Pb(II). A detection limit as low as 7.3 nM has been calculated according to IUPAC for a signal-to-noise ratio of 3.

show abstract

Second-order nonlinear silicon-organic hybrid waveguides

Cited by 40 publications

References 41 publications

Silicon-organic hybrid devices

Silicon-organic hybrid devices

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Integrated Photonic Nanofences: Combining Subwavelength Waveguides with an Enhanced Evanescent Field for Sensing Applications

Contact Info

Product

Resources

About