Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Zhang, Lin; Agarwal, Anuradha M.; Kimerling, Lionel C.; Michel, Jürgen

doi:10.1515/nanoph-2013-0020

Cited by 257 publications

(164 citation statements)

References 218 publications

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“…Surprisingly, one relevant dielectric material that has received less attention in the literature for this purpose is germanium, which has a refractive index greater than 4 and a large nonlinear index in the near-infrared region [27]. Germanium nanoantennas have been used for surface plasmon sensing at high doping levels [28] and high-performance photodetection [29], among other applications, but their nonlinear properties have not been fully examined.…”

Section: Figure 1 Illustration Of the Thg Process For A 100 Nm-thickmentioning

confidence: 99%

Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode

et al. 2016

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ABSTRACT. We present an all-dielectric germanium nanosystem exhibiting a strong third order nonlinear response and efficient third harmonic generation in the optical regime. A thin germanium nanodisk shows a pronounced valley in its scattering cross section close to the dark anapole mode, while the electric field energy inside the disk is maximized due to high confinement within the dielectric. We investigate the dependence of the third harmonic signal on disk size and pump wavelength to reveal the nature of the anapole mode. Each germanium nanodisk generates a high effective third order susceptibility of (3) = 4.3 10 −9, corresponding to an associated third harmonic conversion efficiency of 0.0001% at a wavelength of 1650 nm, which is four orders of magnitude greater than the case of an unstructured germanium reference film. Furthermore, the nonlinear conversion via the anapole mode outperforms that via the radiative dipolar resonances by about one order of magnitude, which is consistent with our numerical simulations. These findings open new possibilities for the optimization of upconversion processes on the nanoscale through the appropriate engineering of suitable dielectric materials.

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Section: Figure 1 Illustration Of the Thg Process For A 100 Nm-thickmentioning

confidence: 99%

Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode

et al. 2016

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“…Integrated photonics on Si is uniquely poised for nonlinear frequency generation or conversion in the mid-IR, as (1) the available material systems (including Si, Ge, SiN x , and chalcogenide glasses) exhibit strong Kerr and Raman nonlinearities [84]; (2) in the mid-IR, detrimental nonlinear absorption effects such as two photon absorption (TPA) are subdued with decreasing photon energy, for example, TPA becomes negligible in silicon at wavelengths longer than 2.2 μm; and (3) strong optical confinement as a result of highindex-contrast and possibly optical resonance enhancement in integrated photonic devices can dramatically boost nonlinear interactions. SRS was one of the first nonlinear interactions exploited towards on-chip light sources on Si.…”

Section: Nonlinear Frequency Generation or Conversionmentioning

confidence: 99%

“…The most important figures of merit for FC include spectral bandwidth, noise, and power conversion efficiency. The comb bandwidth is primarily determined by pump peak power, nonlinear coefficient, as well as dispersion properties of the resonator [84]; the noise can be suppressed via mode-locking the comb into a single-soliton state [105,108]; and high power conversion efficiency (e.g. 40% [105]) can be obtained by operating the resonator in an over-coupled regime.…”

Section: Nonlinear Frequency Generation or Conversionmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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“…An example of a commonly investigated material where multiphoton absorption is critically important is silicon. Silicon is interesting for frequency comb applications in the midinfrared [34] since it is CMOS compatible, it has a large nonlinear coefficient (10 2 times that of silica) and it is virtually transparent in this wavelength range [35]. On the other hand, silicon suffers from TPA for wavelengths below 2.2 µm, and it is therefore not suitable for applications to frequency comb generation when pumping in the nearinfrared and at telecom wavelengths.…”

Section: Frequency Comb Generation In Silicon Resonatorsmentioning

confidence: 99%

Dynamics of microresonator frequency comb generation: models and stability

Hansson

Wabnitz

2016

Nanophotonics

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Microresonator frequency combs hold promise for enabling a new class of light sources that are simultaneously both broadband and coherent, and that could allow for a profusion of potential applications. In this article, we review various theoretical models for describing the temporal dynamics and formation of optical frequency combs. These models form the basis for performing numerical simulations that can be used in order to better understand the comb generation process, for example helping to identify the universal comb characteristics and their different associated physical phenomena. Moreover, models allow for the study, design and optimization of comb properties prior to the fabrication of actual devices. We consider and derive theoretical formalisms based on the Ikeda map, the modal expansion approach, and the Lugiato-Lefever equation. We further discuss the generation of frequency combs in silicon resonators featuring multiphoton absorption and free-carrier effects. Additionally, we review comb stability properties and consider the role of modulational instability as well as of parametric instabilities due to the boundary conditions of the cavity. These instability mechanisms are the basis for comprehending the process of frequency comb formation, for identifying the different dynamical regimes and the associated dependence on the comb parameters. Finally, we also discuss the phenomena of continuous wave bi-and multistability and its relation to the observation of mode-locked cavity solitons.

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Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Cited by 257 publications

References 218 publications

Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode

Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode

Mid-infrared integrated photonics on silicon: a perspective

Dynamics of microresonator frequency comb generation: models and stability

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