Schottky barrier photodiodes in Hg&lt;inf&gt;1-x&lt;/inf&gt;Cd&lt;inf&gt;x&lt;/inf&gt;Te

Polla, Dennis L.; Sood, Apoorva

doi:10.1109/iedm.1978.189443

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“…ϕ b = E g − (ϕ M − χ S ), but these values, sometimes referred to as Schottky-Mott limit, are rarely experimentally observed. The experimental values show a much less pronounced dependence on the metal work function [10,11,16,17]. The discrepancy between the Schottky-Mott theory and experiments is explained by the presence of the interface states at the metal-semiconductor interface, neglected by the first-order theory.…”

Section: Theorymentioning

confidence: 99%

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Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors

Damnjanović

Ponomarenko²,

Elazar

2008

Semicond. Sci. Technol.

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The photo-electric characteristics of tunnel MIS photo-detectors based on Hg 1−x Cd x Te for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO 2 or Al 2 O 3 were investigated. Values as high as 6.2 A W −1 for spectral responsivity and 5.3 × 10 10 cm Hz 1/2 W −1 for specific detectivity were obtained.

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Section: Theorymentioning

confidence: 99%

“…The parameter uniformity which can be achieved with Schottky barriers is especially important for matrix detectors. The first attempts to produce Schottky diodes with narrow gap semiconductors date from 1978 [10,11]. Hg 1−x Cd x Te surface instability makes them, however, difficult to produce.…”

Section: Introductionmentioning

confidence: 99%