Properties of ion-implanted junctions in mercury—cadmium—telluride

Kolodny, Avinoam; Kidron, I.

doi:10.1109/t-ed.1980.19816

Cited by 68 publications

(7 citation statements)

References 15 publications

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“…This behavior has also been reported in HgCdTe gated photodiodes by other authors. 8,9 The breakdown through the field-induced junction is lower than that of the metallurgic junction, and for these photodiodes, we can see from current-voltage data (not shown) that it is at a reverse junction bias of )80 mV. This will be the case if the plasma-typeconverted region is linearly graded, which means that the depletion width would be larger in the junction than at the surface.…”

Section: Dark Current Measurementsmentioning

confidence: 87%

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

Westerhout

Musca

Antoszewski

et al. 2007

Journal of Elec Materi

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Section: Dark Current Measurementsmentioning

confidence: 87%

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

Westerhout

Musca

Antoszewski

et al. 2007

Journal of Elec Materi

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“…Kolodny et al 40,41 were the first in Israel to report the use of the damage-induced n-type conversion caused by ion implantation to fabricate devices within p-type HgCdTe (although with x~0.3). They showed 40 that the maximum doping concentration due to the B + ion implantation (100 keV, 10 13 to 5×10 14 cm -2 ) was ~10 18 cm -3 at 77K, and that the electrical concentration profile spread sometimes by as much as a factor of 10 deeper than the depth profile of the implanted ions.…”

Section: Junction Formationmentioning

confidence: 99%

“…51 Although the native oxides of HgCdTe provide a high-performance surface passivation for n-type HgCdTe, as discussed in Section 2 above, they invert the surface of p-type HgCdTe. 32 It was this inversion layer that forced the researchers, in the early stages, to use only deposited ZnS as the insulating passivation layer (and antireflection coating) in photodiodes (and, for that matter, also in MCT transistors 40,52 ). Indeed, it was used by the groups at the Technion, 40 SCD 53,54 and Soreq-NRC (at Yavneh, Israel), 55 at least at some points in time.…”

Section: Passivationmentioning

confidence: 99%

Thirty years of HgCdTe technology in Israel

Weiss

2009

SPIE Proceedings

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The study of HgCdTe technology in Israel began in the mid 1970's under the leadership of the late Prof. Kidron and his group at the Technion, Israel Institute of Technology. The R&D efforts were continued by other groups at the Technion and other universities and research institutes in Israel, as well as by SCD. Many aspects of the technology of this material were studied, including both bulk crystal and epitaxial growths and microelectronic fabrication methods, with an emphasis on surface treatment and passivation. Various characterization methods were developed to study both the basic and applied material and device properties. The efforts, reviewed in this article, matured at SCD as it commercialized the HgCdTe technology, launching large-volume production lines of state-of-the-art linear and multi-linear TDI LWIR detector arrays of various sizes from 10×1 to 480×6 elements. Over the years, SCD has supplied its customers with thousands of both photoconductive (PC) and photovoltaic (PV) detectors, which are briefly presented in the paper.

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“…In the past the results of these experiments have been interpreted [1][2][3][4][5] using a tunneling model by invoking surface-induced tunneling. Tunneling is assumed to occur either (i) at pinched-off depletion region adjacent to accumulated surface underneath the gate electrode or (ii) across the field-induced junction underneath inverted surface.…”

Section: Introductionmentioning

confidence: 99%